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PHD101NQ03LT-VB Product details
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Product Introduction
PHD101NQ03LT-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is 30V, and it can withstand a leakage current (ID) of up to 100A. The device has a low on-resistance, ensuring effective conduction at a lower gate-source voltage, suitable for efficient power management and drive circuits. Using Trench technology, PHD101NQ03LT-VB provides excellent conductivity while also having low thermal resistance, suitable for a variety of high-power applications.
PHD101NQ03LT-VB is a high-efficiency single N-channel MOSFET in TO252 package, designed for high current and low voltage applications. Its maximum drain-source voltage (VDS) is 30V, and it can withstand a leakage current (ID) of up to 100A. The device has a low on-resistance, ensuring effective conduction at a lower gate-source voltage, suitable for efficient power management and drive circuits. Using Trench technology, PHD101NQ03LT-VB provides excellent conductivity while also having low thermal resistance, suitable for a variety of high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: 3mΩ
- @VGS=10V: 2mΩ
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: 3mΩ
- @VGS=10V: 2mΩ
- **Maximum leakage current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: PHD101NQ03LT-VB is widely used in multiple fields and modules, including: 1. **High-efficiency switching power supply**: This MOSFET is suitable for switching power supply (SMPS) and DC-DC converters, providing high efficiency in power conversion, and is widely used in computer power supplies, consumer electronics and communication equipment. 2. **Motor control**: PHD101NQ03LT-VB can be used to drive various motors, including DC motors and stepper motors, suitable for power tools, home appliances and automation equipment, to achieve efficient and reliable motor control. 3. **LED lighting driver**: This device performs well in LED lighting applications and can efficiently drive LED lamps, suitable for indoor lighting and outdoor lighting systems, providing stable light output. 4. **Battery management system**: PHD101NQ03LT-VB is suitable for battery management and charging control, which can ensure the safety and efficient use of batteries in electric vehicles and portable electronic devices, and improve overall performance.
5. **Power converter and protection circuit**:
This MOSFET can be used as a switching element in a power converter, and can also be used in overcurrent protection and short-circuit protection circuits to improve the safety and reliability of electronic equipment.
Through the above application examples, PHD101NQ03LT-VB demonstrates its wide applicability in power management and drive systems, meeting the needs of modern electronic products for high performance and high reliability.
5. **Power converter and protection circuit**:
This MOSFET can be used as a switching element in a power converter, and can also be used in overcurrent protection and short-circuit protection circuits to improve the safety and reliability of electronic equipment.
Through the above application examples, PHD101NQ03LT-VB demonstrates its wide applicability in power management and drive systems, meeting the needs of modern electronic products for high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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