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PHB9NQ20T-VB Product details
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PHB9NQ20T-VB Product Introduction
PHB9NQ20T-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. This MOSFET has a maximum drain-source voltage (VDS) of 200V, suitable for use in applications requiring higher voltages. Its on-resistance (RDS(ON)) is 300mΩ at VGS of 10V, which makes PHB9NQ20T-VB perform well in high-voltage power management and switching circuits, effectively reducing power consumption and improving the overall efficiency of the system.
PHB9NQ20T-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. This MOSFET has a maximum drain-source voltage (VDS) of 200V, suitable for use in applications requiring higher voltages. Its on-resistance (RDS(ON)) is 300mΩ at VGS of 10V, which makes PHB9NQ20T-VB perform well in high-voltage power management and switching circuits, effectively reducing power consumption and improving the overall efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB9NQ20T-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Trench technology
- **Model**: PHB9NQ20T-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 300mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
The excellent performance of PHB9NQ20T-VB makes it outstanding in many fields and modules. Here are some specific application examples:
1. **Power converter**: Due to its high voltage capability and relatively low on-resistance, PHB9NQ20T-VB is suitable for DC-DC converters, which can effectively improve conversion efficiency and reduce energy loss. It is widely used in switching power supplies and power adapters.
2. **Motor drive**: In high-voltage motor control systems, this MOSFET can provide good switching performance and reliable current handling capabilities. It is suitable for driving brushless motors and stepper motors to ensure efficient operation of the motor.
3. **LED drive circuit**: PHB9NQ20T-VB can be used for LED drive applications, providing stable current to ensure the brightness and reliability of the LED system. It is suitable for various lighting and display applications.
4. **Battery management system**: This MOSFET performs well in battery charging and discharging management. It is suitable for electric vehicles and energy storage systems to ensure battery safety and high efficiency.
5. **Consumer Electronics**: PHB9NQ20T-VB is widely used in consumer electronic devices such as smartphones, tablets and portable chargers, providing efficient power management and protection functions for the devices.
Through these application examples, the versatility and high performance of PHB9NQ20T-VB are demonstrated, making it a key component in modern electronic design.
The excellent performance of PHB9NQ20T-VB makes it outstanding in many fields and modules. Here are some specific application examples:
1. **Power converter**: Due to its high voltage capability and relatively low on-resistance, PHB9NQ20T-VB is suitable for DC-DC converters, which can effectively improve conversion efficiency and reduce energy loss. It is widely used in switching power supplies and power adapters.
2. **Motor drive**: In high-voltage motor control systems, this MOSFET can provide good switching performance and reliable current handling capabilities. It is suitable for driving brushless motors and stepper motors to ensure efficient operation of the motor.
3. **LED drive circuit**: PHB9NQ20T-VB can be used for LED drive applications, providing stable current to ensure the brightness and reliability of the LED system. It is suitable for various lighting and display applications.
4. **Battery management system**: This MOSFET performs well in battery charging and discharging management. It is suitable for electric vehicles and energy storage systems to ensure battery safety and high efficiency.
5. **Consumer Electronics**: PHB9NQ20T-VB is widely used in consumer electronic devices such as smartphones, tablets and portable chargers, providing efficient power management and protection functions for the devices.
Through these application examples, the versatility and high performance of PHB9NQ20T-VB are demonstrated, making it a key component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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