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PHB90N03LT-VB Product details
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Product Introduction: PHB90N03LT-VB
PHB90N03LT-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for low-voltage and high-current applications. Its maximum drain-source voltage (VDS) is 30V, and it can withstand a drain current (ID) of up to 150A, making it very suitable for applications with high current requirements. The device has a threshold voltage (Vth) of 1.7V, ensuring fast turn-on at a lower gate-source voltage. The PHB90N03LT-VB has an ultra-low on-resistance (RDS(ON)) of 3.2mΩ and 2.3mΩ at gate-source voltages of 4.5V and 10V, respectively, which enables it to perform well under the requirements of high efficiency and low power consumption.
PHB90N03LT-VB is a high-performance single N-channel MOSFET in a TO263 package, designed for low-voltage and high-current applications. Its maximum drain-source voltage (VDS) is 30V, and it can withstand a drain current (ID) of up to 150A, making it very suitable for applications with high current requirements. The device has a threshold voltage (Vth) of 1.7V, ensuring fast turn-on at a lower gate-source voltage. The PHB90N03LT-VB has an ultra-low on-resistance (RDS(ON)) of 3.2mΩ and 2.3mΩ at gate-source voltages of 4.5V and 10V, respectively, which enables it to perform well under the requirements of high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Model**: PHB90N03LT-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **ID (leakage current)**: 150A
- **Technology**: Trench
- **Model**: PHB90N03LT-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **ID (leakage current)**: 150A
- **Technology**: Trench
Domain and module applications：
Application areas and module examples:
1. **High-efficiency power management**: PHB90N03LT-VB is ideal for use in switch mode power supplies (SMPS) and DC-DC converters, providing low power consumption and high efficiency in power management modules to ensure stable operation of electronic devices under various load conditions.
2. **Electric vehicles**: In the motor drive and energy management system of electric vehicles, with its current carrying capacity of up to 150A, this MOSFET can effectively control the start-up and operation of the motor and improve overall energy efficiency.
3. **LED drive circuit**: Suitable for high-power LED lighting applications, this MOSFET can effectively control the LED current, reduce power consumption, and provide stable brightness output, and is widely used in indoor and outdoor lighting solutions.
4. **Battery management system**: PHB90N03LT-VB can be used in battery management systems to achieve fast charging and safe discharge, suitable for electric bicycles and energy storage systems, and improve battery life and safety.
5. **Consumer Electronics**: In various consumer electronic devices (such as smartphones, tablets, etc.), as a power switch element, it provides efficient current management, reduces energy consumption, and extends battery life.
Through the above application examples, PHB90N03LT-VB demonstrates its wide applicability in multiple fields, providing efficient and reliable solutions to meet the needs of modern electronic design.
1. **High-efficiency power management**: PHB90N03LT-VB is ideal for use in switch mode power supplies (SMPS) and DC-DC converters, providing low power consumption and high efficiency in power management modules to ensure stable operation of electronic devices under various load conditions.
2. **Electric vehicles**: In the motor drive and energy management system of electric vehicles, with its current carrying capacity of up to 150A, this MOSFET can effectively control the start-up and operation of the motor and improve overall energy efficiency.
3. **LED drive circuit**: Suitable for high-power LED lighting applications, this MOSFET can effectively control the LED current, reduce power consumption, and provide stable brightness output, and is widely used in indoor and outdoor lighting solutions.
4. **Battery management system**: PHB90N03LT-VB can be used in battery management systems to achieve fast charging and safe discharge, suitable for electric bicycles and energy storage systems, and improve battery life and safety.
5. **Consumer Electronics**: In various consumer electronic devices (such as smartphones, tablets, etc.), as a power switch element, it provides efficient current management, reduces energy consumption, and extends battery life.
Through the above application examples, PHB90N03LT-VB demonstrates its wide applicability in multiple fields, providing efficient and reliable solutions to meet the needs of modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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