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PHB66NQ03LT-VB Product details
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Product Introduction
PHB66NQ03LT-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for applications requiring low voltage and high current. Its drain-source voltage (VDS) is 30V, which is suitable for use in low-voltage systems and can provide excellent switching performance and conduction efficiency. The device has an on-resistance (RDS(ON)) of 18mΩ at VGS=4.5V and can be as low as 12mΩ at VGS=10V, supporting a continuous leakage current (ID) of up to 50A. Using Trench technology, this MOSFET performs well in high-frequency switching applications, effectively reducing power consumption and improving system efficiency.
PHB66NQ03LT-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for applications requiring low voltage and high current. Its drain-source voltage (VDS) is 30V, which is suitable for use in low-voltage systems and can provide excellent switching performance and conduction efficiency. The device has an on-resistance (RDS(ON)) of 18mΩ at VGS=4.5V and can be as low as 12mΩ at VGS=10V, supporting a continuous leakage current (ID) of up to 50A. Using Trench technology, this MOSFET performs well in high-frequency switching applications, effectively reducing power consumption and improving system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB66NQ03LT-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 18mΩ (@VGS=4.5V), 12mΩ (@VGS=10V)
- **Continuous leakage current (ID)**: 50A
- **Technology**: Trench
- **Model**: PHB66NQ03LT-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 18mΩ (@VGS=4.5V), 12mΩ (@VGS=10V)
- **Continuous leakage current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power converter**: PHB66NQ03LT-VB is ideal for high-efficiency switching power supplies (SMPS) and DC-DC converters. It can reduce power consumption while improving system efficiency. It is suitable for power management of computer power supplies and other electronic devices.
2. **Motor drive applications**: In motor drive systems, this MOSFET can be used as a switching device in an H-bridge configuration to effectively control the operation of DC motors and stepper motors. It is suitable for motor control in industrial automation and consumer electronics.
3. **LED drive**: PHB66NQ03LT-VB performs well in LED lighting systems, providing stable current for LEDs and supporting efficient brightness adjustment. It is widely used in indoor and outdoor lighting solutions.
4. **Renewable energy systems**: In solar inverters and wind energy converters, this MOSFET can be used in high-frequency switching circuits to optimize the conversion efficiency of electrical energy and improve the overall performance of the system.
1. **Power converter**: PHB66NQ03LT-VB is ideal for high-efficiency switching power supplies (SMPS) and DC-DC converters. It can reduce power consumption while improving system efficiency. It is suitable for power management of computer power supplies and other electronic devices.
2. **Motor drive applications**: In motor drive systems, this MOSFET can be used as a switching device in an H-bridge configuration to effectively control the operation of DC motors and stepper motors. It is suitable for motor control in industrial automation and consumer electronics.
3. **LED drive**: PHB66NQ03LT-VB performs well in LED lighting systems, providing stable current for LEDs and supporting efficient brightness adjustment. It is widely used in indoor and outdoor lighting solutions.
4. **Renewable energy systems**: In solar inverters and wind energy converters, this MOSFET can be used in high-frequency switching circuits to optimize the conversion efficiency of electrical energy and improve the overall performance of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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