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PHB55N03LT-VB Product details
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PHB55N03LT-VB Product Introduction
PHB55N03LT-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and it can operate stably under high load conditions. Its on-resistance (RDS(ON)) is 18mΩ at VGS of 4.5V, and drops to 12mΩ at VGS of 10V, which makes PHB55N03LT-VB excellent in circuits requiring fast switching and efficient power management, which can significantly reduce heat loss and improve overall system efficiency.
PHB55N03LT-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and it can operate stably under high load conditions. Its on-resistance (RDS(ON)) is 18mΩ at VGS of 4.5V, and drops to 12mΩ at VGS of 10V, which makes PHB55N03LT-VB excellent in circuits requiring fast switching and efficient power management, which can significantly reduce heat loss and improve overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB55N03LT-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench technology
- **Model**: PHB55N03LT-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
The excellent performance of PHB55N03LT-VB makes it outstanding in many fields and modules. Here are some specific application examples:
1. **Power converter**: Due to its low on-resistance, PHB55N03LT-VB is very suitable for DC-DC converters, improving conversion efficiency and reducing heat loss, and is widely used in switching power supplies and power adapters.
2. **Motor control**: In motor drive systems, this MOSFET is able to provide fast switching capability and high current handling capability, suitable for brushless motor and stepper motor drive, ensuring efficient motor control.
3. **LED drive circuit**: PHB55N03LT-VB performs well in LED drive applications, and can provide stable current to ensure the brightness and stability of LEDs, suitable for various lighting and display applications.
4. **Battery management system**: This MOSFET can effectively manage the charging and discharging process of the battery, suitable for electric vehicles and energy storage systems, ensuring the safety and long life of the battery.
5. **Consumer Electronics**: PHB55N03LT-VB is widely used in consumer electronic devices such as smartphones, tablets and portable chargers, providing efficient power management and protection functions for the devices.
Through these application examples, the diversity and high performance of PHB55N03LT-VB are demonstrated, becoming an important part of modern electronic design.
The excellent performance of PHB55N03LT-VB makes it outstanding in many fields and modules. Here are some specific application examples:
1. **Power converter**: Due to its low on-resistance, PHB55N03LT-VB is very suitable for DC-DC converters, improving conversion efficiency and reducing heat loss, and is widely used in switching power supplies and power adapters.
2. **Motor control**: In motor drive systems, this MOSFET is able to provide fast switching capability and high current handling capability, suitable for brushless motor and stepper motor drive, ensuring efficient motor control.
3. **LED drive circuit**: PHB55N03LT-VB performs well in LED drive applications, and can provide stable current to ensure the brightness and stability of LEDs, suitable for various lighting and display applications.
4. **Battery management system**: This MOSFET can effectively manage the charging and discharging process of the battery, suitable for electric vehicles and energy storage systems, ensuring the safety and long life of the battery.
5. **Consumer Electronics**: PHB55N03LT-VB is widely used in consumer electronic devices such as smartphones, tablets and portable chargers, providing efficient power management and protection functions for the devices.
Through these application examples, the diversity and high performance of PHB55N03LT-VB are demonstrated, becoming an important part of modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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