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PHB50N03LT-VB Product details
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Product Introduction
PHB50N03LT-VB is a high-performance N-channel MOSFET in a TO263 package designed for low voltage and high current applications. The device has a rated drain-source voltage of 30V and has a very low on-resistance, which can perform well in high-frequency and high-efficiency power conversion. With its high current handling capability and excellent thermal performance, the PHB50N03LT-VB is an ideal choice for a variety of applications such as power management and motor drive.
PHB50N03LT-VB is a high-performance N-channel MOSFET in a TO263 package designed for low voltage and high current applications. The device has a rated drain-source voltage of 30V and has a very low on-resistance, which can perform well in high-frequency and high-efficiency power conversion. With its high current handling capability and excellent thermal performance, the PHB50N03LT-VB is an ideal choice for a variety of applications such as power management and motor drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB50N03LT-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**:
- 18mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **ID (leakage current)**: 50A
- **Technology**: Trench process
- **Model**: PHB50N03LT-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**:
- 18mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **ID (leakage current)**: 50A
- **Technology**: Trench process
Domain and module applications：
Application fields and modules
PHB50N03LT-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In switching power supplies and DC-DC converters, the low on-resistance and high current handling capability of this MOSFET enable efficient power transmission, and it is suitable for power regulation and management modules to maximize energy efficiency.
2. **Motor control**: PHB50N03LT-VB performs well in motor drive systems, supports high current and low voltage operations, and can ensure fast start-up and precise control of motors. It is widely used in industrial automation and electric vehicles.
3. **LED drive**: In LED lighting systems, this device can efficiently drive LEDs with its excellent switching characteristics to meet the brightness adjustment requirements of different lighting occasions.
4. **Automotive electronics**: This MOSFET is suitable for automotive power management and power conversion applications. It can maintain stable performance under high current conditions and is suitable for battery management and motor control modules.
5. **Consumer Electronics**: In consumer electronics products such as smartphones and tablets, PHB50N03LT-VB can be used for power switching and signal conditioning to optimize the energy consumption of the device and improve the overall performance.
PHB50N03LT-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In switching power supplies and DC-DC converters, the low on-resistance and high current handling capability of this MOSFET enable efficient power transmission, and it is suitable for power regulation and management modules to maximize energy efficiency.
2. **Motor control**: PHB50N03LT-VB performs well in motor drive systems, supports high current and low voltage operations, and can ensure fast start-up and precise control of motors. It is widely used in industrial automation and electric vehicles.
3. **LED drive**: In LED lighting systems, this device can efficiently drive LEDs with its excellent switching characteristics to meet the brightness adjustment requirements of different lighting occasions.
4. **Automotive electronics**: This MOSFET is suitable for automotive power management and power conversion applications. It can maintain stable performance under high current conditions and is suitable for battery management and motor control modules.
5. **Consumer Electronics**: In consumer electronics products such as smartphones and tablets, PHB50N03LT-VB can be used for power switching and signal conditioning to optimize the energy consumption of the device and improve the overall performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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