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PHB47NQ10T-VB Product details
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Product Introduction
PHB47NQ10T-VB is a high-performance unipolar N-type MOSFET in TO263 package, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is 100V, suitable for a variety of medium to high voltage circuits. The on-resistance (RDS(ON)) of the device can be as low as 20mΩ when VGS is 10V, making it have extremely low power consumption in the on state, thereby improving the efficiency of the overall circuit. The threshold voltage (Vth) is 1.8V, ensuring fast response and optimizing the switching characteristics of the circuit.
PHB47NQ10T-VB is a high-performance unipolar N-type MOSFET in TO263 package, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is 100V, suitable for a variety of medium to high voltage circuits. The on-resistance (RDS(ON)) of the device can be as low as 20mΩ when VGS is 10V, making it have extremely low power consumption in the on state, thereby improving the efficiency of the overall circuit. The threshold voltage (Vth) is 1.8V, ensuring fast response and optimizing the switching characteristics of the circuit.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB47NQ10T-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench technology
- **Model**: PHB47NQ10T-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**: PHB47NQ10T-VB can be widely used in power management circuits, especially in switching power supplies (SMPS) and DC-DC converters, providing high-efficiency energy conversion, suitable for computer and server power modules.
2. **Motor drive**: This MOSFET is very suitable for motor control circuits and is widely used in industrial automation equipment and power tools to ensure the reliability and efficiency of motor drives.
3. **Battery protection circuit**: In battery management systems, PHB47NQ10T-VB can be used for battery charging and discharging control to ensure that the battery operates within a safe range, especially for electric vehicles and portable electronic devices.
4. **LED drive**: Due to its low on-resistance, PHB47NQ10T-VB is suitable for high-power LED drive circuits, which can effectively improve the performance of LED lighting products and reduce energy loss.
The high performance and stability of PHB47NQ10T-VB make it an ideal component in modern power electronics design, able to meet the needs of various high-performance applications.
1. **Power management**: PHB47NQ10T-VB can be widely used in power management circuits, especially in switching power supplies (SMPS) and DC-DC converters, providing high-efficiency energy conversion, suitable for computer and server power modules.
2. **Motor drive**: This MOSFET is very suitable for motor control circuits and is widely used in industrial automation equipment and power tools to ensure the reliability and efficiency of motor drives.
3. **Battery protection circuit**: In battery management systems, PHB47NQ10T-VB can be used for battery charging and discharging control to ensure that the battery operates within a safe range, especially for electric vehicles and portable electronic devices.
4. **LED drive**: Due to its low on-resistance, PHB47NQ10T-VB is suitable for high-power LED drive circuits, which can effectively improve the performance of LED lighting products and reduce energy loss.
The high performance and stability of PHB47NQ10T-VB make it an ideal component in modern power electronics design, able to meet the needs of various high-performance applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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