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PHB36N06ET-VB Product details
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PHB36N06ET-VB Product Introduction
PHB36N06ET-VB is a high-performance N-Channel MOSFET in TO263 package. It is designed with a maximum drain-source voltage of 60V and a high maximum drain current carrying capacity (ID up to 50A). The device uses Trench technology and has excellent conduction characteristics. The on-resistance (RDS(ON)) is only 32mΩ at VGS=10V and 35mΩ at VGS=4.5V. This low on-resistance and good thermal characteristics make PHB36N06ET-VB an ideal choice for a variety of high-performance power management and switching applications.
PHB36N06ET-VB is a high-performance N-Channel MOSFET in TO263 package. It is designed with a maximum drain-source voltage of 60V and a high maximum drain current carrying capacity (ID up to 50A). The device uses Trench technology and has excellent conduction characteristics. The on-resistance (RDS(ON)) is only 32mΩ at VGS=10V and 35mΩ at VGS=4.5V. This low on-resistance and good thermal characteristics make PHB36N06ET-VB an ideal choice for a variety of high-performance power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB36N06ET-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench
- **Model**: PHB36N06ET-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**: PHB36N06ET-VB is widely used in DC-DC converters and power adapters. Its low on-resistance can improve power conversion efficiency and reduce energy loss, especially under high load conditions.
2. **Electric transportation**: In the drive control and battery management system of electric vehicles, this MOSFET can be used for high-current switching to ensure efficient current transmission and improve the overall performance and endurance of electric vehicles.
3. **Industrial automation**: It is suitable for motor control, servo drive and other high-power applications of various industrial equipment, and improves the working efficiency of equipment through reliable switching characteristics.
4. **Household appliances**: PHB36N06ET-VB can be used for power control of household appliances, such as washing machines, refrigerators, etc., to provide stable power management and enhance the energy efficiency of products.
5. **LED lighting driver**: In the LED drive circuit, this MOSFET can efficiently control the switching of LEDs, helping to achieve higher light efficiency and better dimming effects.
PHB36N06ET-VB is a high performance MOSFET suitable for a variety of applications and can meet the power management and efficiency requirements of modern electronic devices.
1. **Power management**: PHB36N06ET-VB is widely used in DC-DC converters and power adapters. Its low on-resistance can improve power conversion efficiency and reduce energy loss, especially under high load conditions.
2. **Electric transportation**: In the drive control and battery management system of electric vehicles, this MOSFET can be used for high-current switching to ensure efficient current transmission and improve the overall performance and endurance of electric vehicles.
3. **Industrial automation**: It is suitable for motor control, servo drive and other high-power applications of various industrial equipment, and improves the working efficiency of equipment through reliable switching characteristics.
4. **Household appliances**: PHB36N06ET-VB can be used for power control of household appliances, such as washing machines, refrigerators, etc., to provide stable power management and enhance the energy efficiency of products.
5. **LED lighting driver**: In the LED drive circuit, this MOSFET can efficiently control the switching of LEDs, helping to achieve higher light efficiency and better dimming effects.
PHB36N06ET-VB is a high performance MOSFET suitable for a variety of applications and can meet the power management and efficiency requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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