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PHB33NQ20T-VB Product details
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PHB33NQ20T-VB Product Introduction
PHB33NQ20T-VB is a high-performance N-Channel MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 200V, and it can withstand a drain current (ID) of up to 40A. The on-resistance (RDS(ON)) of this MOSFET at 10V gate-source voltage is 48mΩ, ensuring excellent conduction efficiency, which is very suitable for use in applications such as switching power supplies, DC-DC converters and motor drives.
PHB33NQ20T-VB is a high-performance N-Channel MOSFET in TO263 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 200V, and it can withstand a drain current (ID) of up to 40A. The on-resistance (RDS(ON)) of this MOSFET at 10V gate-source voltage is 48mΩ, ensuring excellent conduction efficiency, which is very suitable for use in applications such as switching power supplies, DC-DC converters and motor drives.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB33NQ20T-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Model**: PHB33NQ20T-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
PHB33NQ20T-VB has a wide range of applications in many fields, mainly including:
1. **Switching power supply**:
- In the switching power supply, PHB33NQ20T-VB can be used as the main switching element, and through the efficient conduction and shutdown characteristics, the power conversion efficiency is improved, which is suitable for computer power supply and communication equipment.
2. **DC-DC converter**:
- This MOSFET is suitable for use as a switch in the DC-DC converter, which can provide stable output voltage and current, and is widely used in mobile devices and industrial power modules.
3. **Motor control**:
- PHB33NQ20T-VB can be used as a switching element in the motor drive circuit, which is suitable for power tools and automation equipment, and can achieve efficient current management and control.
4. **LED Driver**:
- In LED driver circuits, this MOSFET can be used as a switch, which can respond quickly to adjust the brightness, suitable for commercial and home lighting applications, ensuring high efficiency and long life.
5. **Power Amplifier**:
- PHB33NQ20T-VB can be used in high-frequency power amplifier circuits to ensure stability under high voltage and high current, and is widely used in wireless communications and audio amplifiers.
With its excellent electrical performance and wide application applicability, PHB33NQ20T-VB is an ideal choice for high voltage and high efficiency applications.
PHB33NQ20T-VB has a wide range of applications in many fields, mainly including:
1. **Switching power supply**:
- In the switching power supply, PHB33NQ20T-VB can be used as the main switching element, and through the efficient conduction and shutdown characteristics, the power conversion efficiency is improved, which is suitable for computer power supply and communication equipment.
2. **DC-DC converter**:
- This MOSFET is suitable for use as a switch in the DC-DC converter, which can provide stable output voltage and current, and is widely used in mobile devices and industrial power modules.
3. **Motor control**:
- PHB33NQ20T-VB can be used as a switching element in the motor drive circuit, which is suitable for power tools and automation equipment, and can achieve efficient current management and control.
4. **LED Driver**:
- In LED driver circuits, this MOSFET can be used as a switch, which can respond quickly to adjust the brightness, suitable for commercial and home lighting applications, ensuring high efficiency and long life.
5. **Power Amplifier**:
- PHB33NQ20T-VB can be used in high-frequency power amplifier circuits to ensure stability under high voltage and high current, and is widely used in wireless communications and audio amplifiers.
With its excellent electrical performance and wide application applicability, PHB33NQ20T-VB is an ideal choice for high voltage and high efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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