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PHB32N06LT-VB Product details
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Product Introduction
PHB32N06LT-VB is a high-efficiency single N-channel MOSFET in a TO263 package, designed for medium and high power applications. Its maximum drain-source voltage (VDS) is 60V and it can withstand a maximum drain current (ID) of up to 50A. The threshold voltage (Vth) of this MOSFET is 1.7V, ensuring reliable conduction at lower gate-source voltages. Utilizing Trench technology, the PHB32N06LT-VB provides excellent conduction performance and low on-resistance, making it ideal for a variety of switching power supplies and motor drive applications.
PHB32N06LT-VB is a high-efficiency single N-channel MOSFET in a TO263 package, designed for medium and high power applications. Its maximum drain-source voltage (VDS) is 60V and it can withstand a maximum drain current (ID) of up to 50A. The threshold voltage (Vth) of this MOSFET is 1.7V, ensuring reliable conduction at lower gate-source voltages. Utilizing Trench technology, the PHB32N06LT-VB provides excellent conduction performance and low on-resistance, making it ideal for a variety of switching power supplies and motor drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: 35mΩ
- @VGS=10V: 32mΩ
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: 35mΩ
- @VGS=10V: 32mΩ
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: PHB32N06LT-VB is widely used in many fields and modules, including: 1. **Power management**: This MOSFET is suitable for switching power supplies (SMPS) and DC-DC converters, which can effectively improve the power conversion efficiency and is widely used in power adapters, LED drivers, battery chargers and other devices. 2. **Motor control**: PHB32N06LT-VB is very suitable for driving DC motors and stepper motors. It is widely used in power tools, household appliances and industrial automation equipment, and can efficiently control the start and stop of motors. 3. **LED lighting**: This MOSFET can be used to efficiently drive LED lighting systems to ensure stable light output in various environments, suitable for commercial lighting and outdoor lighting applications. 4. **Battery management system**: PHB32N06LT-VB can be used as a switching element for charge and discharge control in battery management systems, especially in electric vehicles and portable devices to ensure the safety and effective use of batteries.
5. **Electrical protection circuit**:
This MOSFET is suitable for overcurrent and short-circuit protection circuits, which can improve the reliability of equipment and ensure the safe operation of electronic equipment.
Through the above application examples, PHB32N06LT-VB demonstrates its wide applicability in medium and high power electronic equipment, which can meet the needs of modern electronic products for high performance and high reliability.
5. **Electrical protection circuit**:
This MOSFET is suitable for overcurrent and short-circuit protection circuits, which can improve the reliability of equipment and ensure the safe operation of electronic equipment.
Through the above application examples, PHB32N06LT-VB demonstrates its wide applicability in medium and high power electronic equipment, which can meet the needs of modern electronic products for high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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