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PHB29N08T-VB Product details
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PHB29N08T-VB Product Introduction
PHB29N08T-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. This MOSFET has a maximum drain-source voltage (VDS) of 100V, suitable for use in applications requiring higher voltages. Its on-resistance (RDS(ON)) is 100mΩ at VGS of 10V, ensuring good conductivity under load conditions. The design of PHB29N08T-VB enables it to excel in power management and switching circuits that require high reliability and efficiency.
PHB29N08T-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. This MOSFET has a maximum drain-source voltage (VDS) of 100V, suitable for use in applications requiring higher voltages. Its on-resistance (RDS(ON)) is 100mΩ at VGS of 10V, ensuring good conductivity under load conditions. The design of PHB29N08T-VB enables it to excel in power management and switching circuits that require high reliability and efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB29N08T-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench technology
- **Model**: PHB29N08T-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
The excellent performance of PHB29N08T-VB makes it outstanding in many fields and modules. Here are some specific application examples:
1. **Power converter**: Due to its low on-resistance, PHB29N08T-VB is very suitable for DC-DC converters, which can effectively improve conversion efficiency and reduce heat loss. It is widely used in switching power supplies and power adapters.
2. **Motor control**: In motor drive systems, this MOSFET can provide good switching performance and reliable current handling capabilities. It is suitable for the control of DC motors and brushless motors to ensure the efficient operation of motors.
3. **LED drive circuit**: PHB29N08T-VB performs well in LED drive applications, can provide stable current, ensure the brightness and life of LED systems, and is suitable for lighting and display applications.
4. **Battery management system**: This MOSFET is effective in battery charging and discharging management. It can be used in electric vehicles and energy storage systems to ensure the safety and high efficiency of batteries.
5. **Consumer Electronics**: PHB29N08T-VB is widely used in consumer electronic devices such as smartphones, tablets and portable chargers, providing efficient power management and protection functions for the devices.
Through these application examples, the diversity and high performance of PHB29N08T-VB are demonstrated, making it a key component in modern electronic design.
The excellent performance of PHB29N08T-VB makes it outstanding in many fields and modules. Here are some specific application examples:
1. **Power converter**: Due to its low on-resistance, PHB29N08T-VB is very suitable for DC-DC converters, which can effectively improve conversion efficiency and reduce heat loss. It is widely used in switching power supplies and power adapters.
2. **Motor control**: In motor drive systems, this MOSFET can provide good switching performance and reliable current handling capabilities. It is suitable for the control of DC motors and brushless motors to ensure the efficient operation of motors.
3. **LED drive circuit**: PHB29N08T-VB performs well in LED drive applications, can provide stable current, ensure the brightness and life of LED systems, and is suitable for lighting and display applications.
4. **Battery management system**: This MOSFET is effective in battery charging and discharging management. It can be used in electric vehicles and energy storage systems to ensure the safety and high efficiency of batteries.
5. **Consumer Electronics**: PHB29N08T-VB is widely used in consumer electronic devices such as smartphones, tablets and portable chargers, providing efficient power management and protection functions for the devices.
Through these application examples, the diversity and high performance of PHB29N08T-VB are demonstrated, making it a key component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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