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PHB191NQ06LT-VB Product details
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PHB191NQ06LT-VB Product Introduction
PHB191NQ06LT-VB is a high-performance N-Channel MOSFET in TO263 package, designed for applications requiring high current and low conduction loss. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and it can withstand a drain current (ID) of up to 150A. Its on-resistance (RDS(ON)) at 10V gate-source voltage is only 4mΩ, ensuring extremely low conduction loss, which is very suitable for use in high-frequency and high-efficiency switching applications.
PHB191NQ06LT-VB is a high-performance N-Channel MOSFET in TO263 package, designed for applications requiring high current and low conduction loss. The maximum drain-source voltage (VDS) of this MOSFET is 60V, and it can withstand a drain current (ID) of up to 150A. Its on-resistance (RDS(ON)) at 10V gate-source voltage is only 4mΩ, ensuring extremely low conduction loss, which is very suitable for use in high-frequency and high-efficiency switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB191NQ06LT-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Model**: PHB191NQ06LT-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
PHB191NQ06LT-VB has a wide range of applications in many fields, mainly including:
1. **DC-DC converter**:
- This MOSFET acts as the main switch in the DC-DC converter, which can significantly improve the power conversion efficiency and is suitable for computer power supplies, mobile devices and industrial power modules.
2. **Power management system**:
- PHB191NQ06LT-VB can be used for the output switch of the power management IC to reduce power consumption and improve overall efficiency. It is widely used in consumer electronics and electric vehicle charging systems.
3. **Motor drive circuit**:
- This device is suitable for use in motor drives, providing high current drive capabilities. It is widely used in power tools, household appliances and automation equipment to ensure stable and reliable current output.
4. **LED lighting system**:
- In LED driving circuits, PHB191NQ06LT-VB can be used as a switching element, which can switch quickly to improve the efficiency and brightness of LED lighting systems, and is suitable for home and commercial lighting applications.
5. **Industrial Automation**:
- This MOSFET can be used as a power switch in industrial automation control systems, capable of handling high current loads, and is suitable for use in various automation equipment and control systems to achieve high efficiency and reliability.
With its excellent electrical performance and wide application applicability, PHB191NQ06LT-VB is an ideal choice for high current and high efficiency applications.
PHB191NQ06LT-VB has a wide range of applications in many fields, mainly including:
1. **DC-DC converter**:
- This MOSFET acts as the main switch in the DC-DC converter, which can significantly improve the power conversion efficiency and is suitable for computer power supplies, mobile devices and industrial power modules.
2. **Power management system**:
- PHB191NQ06LT-VB can be used for the output switch of the power management IC to reduce power consumption and improve overall efficiency. It is widely used in consumer electronics and electric vehicle charging systems.
3. **Motor drive circuit**:
- This device is suitable for use in motor drives, providing high current drive capabilities. It is widely used in power tools, household appliances and automation equipment to ensure stable and reliable current output.
4. **LED lighting system**:
- In LED driving circuits, PHB191NQ06LT-VB can be used as a switching element, which can switch quickly to improve the efficiency and brightness of LED lighting systems, and is suitable for home and commercial lighting applications.
5. **Industrial Automation**:
- This MOSFET can be used as a power switch in industrial automation control systems, capable of handling high current loads, and is suitable for use in various automation equipment and control systems to achieve high efficiency and reliability.
With its excellent electrical performance and wide application applicability, PHB191NQ06LT-VB is an ideal choice for high current and high efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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