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PHB152NQ03LTA-VB Product details
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Product Introduction
PHB152NQ03LTA-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage and high current applications. It has a rated drain-source voltage of 30V and extremely low on-resistance, making it suitable for use in high-frequency and high-efficiency power conversion applications. With excellent thermal performance and high current handling capabilities, PHB152NQ03LTA-VB is an ideal choice for power management and motor drive in modern electronic devices, meeting the needs for high efficiency and reliability.
PHB152NQ03LTA-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage and high current applications. It has a rated drain-source voltage of 30V and extremely low on-resistance, making it suitable for use in high-frequency and high-efficiency power conversion applications. With excellent thermal performance and high current handling capabilities, PHB152NQ03LTA-VB is an ideal choice for power management and motor drive in modern electronic devices, meeting the needs for high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB152NQ03LTA-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **ID (leakage current)**: 98A
- **Technology**: Trench process
- **Model**: PHB152NQ03LTA-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON)**:
- 2.7mΩ @ VGS = 4.5V
- 2.4mΩ @ VGS = 10V
- **ID (leakage current)**: 98A
- **Technology**: Trench process
Domain and module applications：
Application fields and modules
PHB152NQ03LTA-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In switching power supplies and DC-DC converters, the low on-resistance and high current handling capability of this MOSFET enable efficient power conversion, and it is suitable for power regulation and management modules to ensure maximum energy utilization.
2. **Motor control**: This device performs well in motor drive systems and can operate stably under high current and low voltage environments, meeting the needs of fast start-up and precise control of motors.
3. **LED drive**: PHB152NQ03LTA-VB is also widely used in LED lighting applications. Its excellent switching characteristics enable it to efficiently drive LEDs and is suitable for various lighting occasions.
4. **Automotive electronics**: This MOSFET is suitable for automotive power management and power conversion applications, ensuring stability under high current conditions, and is widely used in battery management and motor control systems.
5. **Consumer Electronics**: In small electronic devices such as smartphones and tablets, PHB152NQ03LTA-VB can be used for power switching and signal conditioning to optimize the energy consumption of the device and improve overall performance.
PHB152NQ03LTA-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In switching power supplies and DC-DC converters, the low on-resistance and high current handling capability of this MOSFET enable efficient power conversion, and it is suitable for power regulation and management modules to ensure maximum energy utilization.
2. **Motor control**: This device performs well in motor drive systems and can operate stably under high current and low voltage environments, meeting the needs of fast start-up and precise control of motors.
3. **LED drive**: PHB152NQ03LTA-VB is also widely used in LED lighting applications. Its excellent switching characteristics enable it to efficiently drive LEDs and is suitable for various lighting occasions.
4. **Automotive electronics**: This MOSFET is suitable for automotive power management and power conversion applications, ensuring stability under high current conditions, and is widely used in battery management and motor control systems.
5. **Consumer Electronics**: In small electronic devices such as smartphones and tablets, PHB152NQ03LTA-VB can be used for power switching and signal conditioning to optimize the energy consumption of the device and improve overall performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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