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PHB11N06LT-VB Product details
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PHB11N06LT-VB Product Introduction
PHB11N06LT-VB is a high-efficiency N-Channel MOSFET in TO263 package, designed for applications requiring high current and low resistance. Its maximum drain-source voltage is 60V and the leakage current is up to 50A. With excellent on-resistance (RDS(ON) of 35mΩ @ VGS=4.5V and 32mΩ @ VGS=10V), PHB11N06LT-VB ensures excellent current transfer efficiency. This MOSFET adopts advanced Trench technology, providing fast switching capability and excellent thermal performance, suitable for a variety of electronic devices and power management systems.
PHB11N06LT-VB is a high-efficiency N-Channel MOSFET in TO263 package, designed for applications requiring high current and low resistance. Its maximum drain-source voltage is 60V and the leakage current is up to 50A. With excellent on-resistance (RDS(ON) of 35mΩ @ VGS=4.5V and 32mΩ @ VGS=10V), PHB11N06LT-VB ensures excellent current transfer efficiency. This MOSFET adopts advanced Trench technology, providing fast switching capability and excellent thermal performance, suitable for a variety of electronic devices and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB11N06LT-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench
- **Model**: PHB11N06LT-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Applicable fields and modules
1. **Power management**: PHB11N06LT-VB is widely used in switching power supplies and power management modules, which can effectively reduce power consumption and improve power conversion efficiency. It is suitable for various electronic devices such as laptops and chargers.
2. **Power tools**: Due to its high current handling capability, this MOSFET is suitable for motor drive and control circuits of power tools, which can provide stable power output and improve tool performance and life.
3. **Electric vehicles**: PHB11N06LT-VB is a key component in the battery management system of electric vehicles, which can optimize the efficiency of power use, enhance endurance, and improve the control accuracy of motors.
4. **LED driver**: This MOSFET is suitable for LED lighting drive circuits, which can achieve higher energy efficiency and better light efficiency by accurately controlling the brightness and working status of LEDs.
5. **Consumer Electronics**: PHB11N06LT-VB is also widely used in consumer electronics such as smartphones and tablets as a power switch and signal amplifier to ensure efficient and stable operation of the equipment.
Through these applications, PHB11N06LT-VB plays an important role in modern electronic design and is an indispensable key component in low-voltage, high-power circuits.
1. **Power management**: PHB11N06LT-VB is widely used in switching power supplies and power management modules, which can effectively reduce power consumption and improve power conversion efficiency. It is suitable for various electronic devices such as laptops and chargers.
2. **Power tools**: Due to its high current handling capability, this MOSFET is suitable for motor drive and control circuits of power tools, which can provide stable power output and improve tool performance and life.
3. **Electric vehicles**: PHB11N06LT-VB is a key component in the battery management system of electric vehicles, which can optimize the efficiency of power use, enhance endurance, and improve the control accuracy of motors.
4. **LED driver**: This MOSFET is suitable for LED lighting drive circuits, which can achieve higher energy efficiency and better light efficiency by accurately controlling the brightness and working status of LEDs.
5. **Consumer Electronics**: PHB11N06LT-VB is also widely used in consumer electronics such as smartphones and tablets as a power switch and signal amplifier to ensure efficient and stable operation of the equipment.
Through these applications, PHB11N06LT-VB plays an important role in modern electronic design and is an indispensable key component in low-voltage, high-power circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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