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PHB110NQ08T-VB Product details
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PHB110NQ08T-VB Product Introduction
PHB110NQ08T-VB is a high-performance N-Channel MOSFET in a TO263 package, designed for high current and high efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 80V, supporting a drain current (ID) of up to 120A. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) of the PHB110NQ08T-VB is only 10mΩ, and is even lower to 6mΩ at a gate-source voltage of 10V. This makes the device perform well in applications that require high switching frequency and low conduction loss, and is suitable for power management and various switching applications.
PHB110NQ08T-VB is a high-performance N-Channel MOSFET in a TO263 package, designed for high current and high efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 80V, supporting a drain current (ID) of up to 120A. At a gate-source voltage of 4.5V, the on-resistance (RDS(ON)) of the PHB110NQ08T-VB is only 10mΩ, and is even lower to 6mΩ at a gate-source voltage of 10V. This makes the device perform well in applications that require high switching frequency and low conduction loss, and is suitable for power management and various switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB110NQ08T-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Model**: PHB110NQ08T-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and modules
PHB110NQ08T-VB has a wide range of applications in multiple fields, mainly including:
1. **DC-DC converter**:
- This MOSFET is used as the main switch in a high-efficiency DC-DC converter, which can effectively improve the power conversion efficiency and is suitable for use in servers, network equipment and industrial power modules.
2. **Power management system**:
- PHB110NQ08T-VB is suitable for the output switch of power management IC, which helps to reduce power consumption and improve the overall efficiency of the system. It is widely used in consumer electronics and electric vehicle charging equipment.
3. **Motor drive circuit**:
- This device can be used for motor drives, providing high current drive capabilities, suitable for use in applications such as power tools, household appliances and robots to ensure stable current output.
4. **LED lighting system**:
- In the LED drive circuit, PHB110NQ08T-VB acts as a switching element, which can switch quickly and help improve the efficiency and brightness of the LED lighting system.
5. **Industrial Automation**:
- This MOSFET is used as a power switch in industrial automation control systems, capable of handling high current loads, and is suitable for various automation equipment and control systems.
With its excellent electrical characteristics and wide applicability, PHB110NQ08T-VB is an ideal choice for high current and high efficiency applications.
PHB110NQ08T-VB has a wide range of applications in multiple fields, mainly including:
1. **DC-DC converter**:
- This MOSFET is used as the main switch in a high-efficiency DC-DC converter, which can effectively improve the power conversion efficiency and is suitable for use in servers, network equipment and industrial power modules.
2. **Power management system**:
- PHB110NQ08T-VB is suitable for the output switch of power management IC, which helps to reduce power consumption and improve the overall efficiency of the system. It is widely used in consumer electronics and electric vehicle charging equipment.
3. **Motor drive circuit**:
- This device can be used for motor drives, providing high current drive capabilities, suitable for use in applications such as power tools, household appliances and robots to ensure stable current output.
4. **LED lighting system**:
- In the LED drive circuit, PHB110NQ08T-VB acts as a switching element, which can switch quickly and help improve the efficiency and brightness of the LED lighting system.
5. **Industrial Automation**:
- This MOSFET is used as a power switch in industrial automation control systems, capable of handling high current loads, and is suitable for various automation equipment and control systems.
With its excellent electrical characteristics and wide applicability, PHB110NQ08T-VB is an ideal choice for high current and high efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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