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PHB110NQ08LT-VB Product details
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Product Introduction
PHB110NQ08LT-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 80V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. When VGS is 10V, the on-resistance (RDS(ON)) is only 6mΩ, and it can support a drain current (ID) of up to 120A, making it an excellent performer in applications requiring low power consumption and high efficiency.
PHB110NQ08LT-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage and high current applications. The device has a maximum drain-source voltage (VDS) of 80V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. When VGS is 10V, the on-resistance (RDS(ON)) is only 6mΩ, and it can support a drain current (ID) of up to 120A, making it an excellent performer in applications requiring low power consumption and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB110NQ08LT-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Model**: PHB110NQ08LT-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power converter**: PHB110NQ08LT-VB is suitable for switching power supplies (SMPS) and DC-DC converters, providing efficient voltage conversion and current control, and is widely used in computer power supplies and consumer electronics.
2. **Motor drive**: In motor control modules, this MOSFET can be used to drive DC motors and stepper motors, ensuring efficient and precise current control to improve motor performance.
3. **Inverter**: PHB110NQ08LT-VB can be used in inverter circuits, especially in solar inverters and UPS systems, to achieve efficient DC to AC conversion.
4. **LED driver**: Due to its low on-resistance, PHB110NQ08LT-VB can be used as a driver switch in LED lighting systems, ensuring efficient and stable working performance, and is suitable for commercial and industrial lighting applications.
5. **Battery Management System**: This device can be used for battery charge and discharge control in battery management applications, helping to improve battery efficiency and safety, and is suitable for electric vehicles and renewable energy storage systems.
The high conductivity and reliability of PHB110NQ08LT-VB make it an ideal choice for a variety of high-performance electronic applications.
1. **Power converter**: PHB110NQ08LT-VB is suitable for switching power supplies (SMPS) and DC-DC converters, providing efficient voltage conversion and current control, and is widely used in computer power supplies and consumer electronics.
2. **Motor drive**: In motor control modules, this MOSFET can be used to drive DC motors and stepper motors, ensuring efficient and precise current control to improve motor performance.
3. **Inverter**: PHB110NQ08LT-VB can be used in inverter circuits, especially in solar inverters and UPS systems, to achieve efficient DC to AC conversion.
4. **LED driver**: Due to its low on-resistance, PHB110NQ08LT-VB can be used as a driver switch in LED lighting systems, ensuring efficient and stable working performance, and is suitable for commercial and industrial lighting applications.
5. **Battery Management System**: This device can be used for battery charge and discharge control in battery management applications, helping to improve battery efficiency and safety, and is suitable for electric vehicles and renewable energy storage systems.
The high conductivity and reliability of PHB110NQ08LT-VB make it an ideal choice for a variety of high-performance electronic applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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