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PHB110NQ06LT-VB Product details
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Product Introduction
PHB110NQ06LT-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. Its drain-source voltage (VDS) is 60V and the maximum drain current (ID) can reach 150A. The threshold voltage (Vth) of this MOSFET is 3V, ensuring reliable conduction at a reasonable gate-source voltage. Using Trench technology, PHB110NQ06LT-VB has extremely low on-resistance (RDS(ON)), making it excel in high-frequency switching and power management applications.
PHB110NQ06LT-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. Its drain-source voltage (VDS) is 60V and the maximum drain current (ID) can reach 150A. The threshold voltage (Vth) of this MOSFET is 3V, ensuring reliable conduction at a reasonable gate-source voltage. Using Trench technology, PHB110NQ06LT-VB has extremely low on-resistance (RDS(ON)), making it excel in high-frequency switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @VGS=10V: 4mΩ
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- @VGS=10V: 4mΩ
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
PHB110NQ06LT-VB is suitable for multiple fields and modules, including:
1. **Power management**:
This MOSFET is very suitable for switching power supplies (SMPS) and high-efficiency DC-DC converters. Its low on-resistance ensures high efficiency under high load conditions, suitable for power adapters, chargers and industrial power management systems.
2. **Motor drive**:
PHB110NQ06LT-VB can effectively control DC motors and stepper motors, and is widely used in industrial automation, power tools and household appliances, providing efficient motor drive solutions.
3. **Battery management system**:
In battery charge and discharge management, this MOSFET can be used as a switching element to ensure safe and efficient battery charging and discharging, suitable for power management of electric vehicles, energy storage systems and portable devices.
4. **LED driver**:
PHB110NQ06LT-VB also performs well in high-power LED lighting systems and can drive high-brightness LED lamps, which are widely used in commercial lighting, stage lighting, outdoor lighting and other fields.
5. **Electrical protection**:
This MOSFET is suitable for electrical protection circuits, such as overcurrent protection and short-circuit protection, which can ensure the safe operation of various electronic equipment and improve the reliability and durability of the equipment.
Through these application examples, PHB110NQ06LT-VB demonstrates its importance in the field of efficient power electronics and fast switching control, which can meet the needs of modern electronic products for high performance and high reliability.
PHB110NQ06LT-VB is suitable for multiple fields and modules, including:
1. **Power management**:
This MOSFET is very suitable for switching power supplies (SMPS) and high-efficiency DC-DC converters. Its low on-resistance ensures high efficiency under high load conditions, suitable for power adapters, chargers and industrial power management systems.
2. **Motor drive**:
PHB110NQ06LT-VB can effectively control DC motors and stepper motors, and is widely used in industrial automation, power tools and household appliances, providing efficient motor drive solutions.
3. **Battery management system**:
In battery charge and discharge management, this MOSFET can be used as a switching element to ensure safe and efficient battery charging and discharging, suitable for power management of electric vehicles, energy storage systems and portable devices.
4. **LED driver**:
PHB110NQ06LT-VB also performs well in high-power LED lighting systems and can drive high-brightness LED lamps, which are widely used in commercial lighting, stage lighting, outdoor lighting and other fields.
5. **Electrical protection**:
This MOSFET is suitable for electrical protection circuits, such as overcurrent protection and short-circuit protection, which can ensure the safe operation of various electronic equipment and improve the reliability and durability of the equipment.
Through these application examples, PHB110NQ06LT-VB demonstrates its importance in the field of efficient power electronics and fast switching control, which can meet the needs of modern electronic products for high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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