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PHB101NQ04T-VB Product details
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PHB101NQ04T-VB Product Introduction
PHB101NQ04T-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for low voltage and high current applications. This MOSFET has a maximum drain-source voltage (VDS) of 40V and can operate stably under high load conditions. Its on-resistance (RDS(ON)) is 6mΩ at VGS of 4.5V, and drops to 5mΩ at VGS of 10V. This makes PHB101NQ04T-VB particularly suitable for efficient power management and fast switching applications, which can effectively reduce heat loss and improve overall system efficiency.
PHB101NQ04T-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for low voltage and high current applications. This MOSFET has a maximum drain-source voltage (VDS) of 40V and can operate stably under high load conditions. Its on-resistance (RDS(ON)) is 6mΩ at VGS of 4.5V, and drops to 5mΩ at VGS of 10V. This makes PHB101NQ04T-VB particularly suitable for efficient power management and fast switching applications, which can effectively reduce heat loss and improve overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB101NQ04T-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
- **Model**: PHB101NQ04T-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
The excellent performance of PHB101NQ04T-VB makes it excel in multiple fields and modules. Here are some specific application examples:
1. **Power converter**: Due to its extremely low on-resistance, PHB101NQ04T-VB is very suitable for high-efficiency DC-DC converters, which can significantly improve conversion efficiency and reduce heat loss, especially in switching power supplies.
2. **Motor drive**: In motor control applications, this MOSFET is able to provide fast switching capability and high current handling capability, suitable for driving various motors, including brushless DC motors and stepper motors.
3. **LED drive circuit**: PHB101NQ04T-VB performs well in LED driving, can provide stable current, ensure the brightness and stability of LED systems, and is suitable for lighting and display applications.
4. **Battery management system**: This MOSFET can effectively manage the charging and discharging process of the battery, suitable for use in electric vehicles and renewable energy systems to ensure the safety and long life of the battery.
5. **High-Performance Computing**: In high-performance computing and data center applications, PHB101NQ04T-VB can be used for power supply and current management to help the system maintain high performance and stability.
Through these application examples, the diversity and high performance of PHB101NQ04T-VB are demonstrated, becoming an important part of modern electronic design.
The excellent performance of PHB101NQ04T-VB makes it excel in multiple fields and modules. Here are some specific application examples:
1. **Power converter**: Due to its extremely low on-resistance, PHB101NQ04T-VB is very suitable for high-efficiency DC-DC converters, which can significantly improve conversion efficiency and reduce heat loss, especially in switching power supplies.
2. **Motor drive**: In motor control applications, this MOSFET is able to provide fast switching capability and high current handling capability, suitable for driving various motors, including brushless DC motors and stepper motors.
3. **LED drive circuit**: PHB101NQ04T-VB performs well in LED driving, can provide stable current, ensure the brightness and stability of LED systems, and is suitable for lighting and display applications.
4. **Battery management system**: This MOSFET can effectively manage the charging and discharging process of the battery, suitable for use in electric vehicles and renewable energy systems to ensure the safety and long life of the battery.
5. **High-Performance Computing**: In high-performance computing and data center applications, PHB101NQ04T-VB can be used for power supply and current management to help the system maintain high performance and stability.
Through these application examples, the diversity and high performance of PHB101NQ04T-VB are demonstrated, becoming an important part of modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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