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PHB101NQ04LT-VB Product details
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Product Introduction
PHB101NQ04LT-VB is a high-performance N-channel MOSFET in a TO263 package, designed for low voltage and high current applications. The device has a rated drain-source voltage of 40V and has a very low on-resistance, enabling excellent performance in high-frequency and high-efficiency power conversion. The design of PHB101NQ04LT-VB enables it to perform well in applications such as power management and motor drive, meeting the needs of modern electronic equipment for high performance and reliability.
PHB101NQ04LT-VB is a high-performance N-channel MOSFET in a TO263 package, designed for low voltage and high current applications. The device has a rated drain-source voltage of 40V and has a very low on-resistance, enabling excellent performance in high-frequency and high-efficiency power conversion. The design of PHB101NQ04LT-VB enables it to perform well in applications such as power management and motor drive, meeting the needs of modern electronic equipment for high performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: PHB101NQ04LT-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **RDS(ON)**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **ID (leakage current)**: 100A
- **Technology**: Trench process
- **Model**: PHB101NQ04LT-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **RDS(ON)**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **ID (leakage current)**: 100A
- **Technology**: Trench process
Domain and module applications：
Application fields and modules
PHB101NQ04LT-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In high-efficiency switching power supplies and DC-DC converters, the low on-resistance of this MOSFET enables it to provide efficient power transmission, suitable for power regulation and management modules to ensure maximum energy utilization.
2. **Motor drive**: PHB101NQ04LT-VB is widely used in motor control systems, capable of supporting high current and low voltage environments, ensuring fast response and stable operation of motors.
3. **LED drive**: In LED lighting systems, with its excellent switching characteristics, the device can achieve efficient current drive to meet the precise needs of brightness adjustment.
4. **Automotive electronics**: This MOSFET is suitable for automotive power management and power conversion applications, providing reliable performance and ensuring stability under high current conditions, suitable for battery management and motor drive systems.
5. **Consumer Electronics**: In consumer electronics products such as smartphones and tablets, PHB101NQ04LT-VB can be used for power switching and signal conditioning to optimize the energy consumption of the device and improve the overall performance.
PHB101NQ04LT-VB MOSFET can be widely used in the following fields and modules:
1. **Power management**: In high-efficiency switching power supplies and DC-DC converters, the low on-resistance of this MOSFET enables it to provide efficient power transmission, suitable for power regulation and management modules to ensure maximum energy utilization.
2. **Motor drive**: PHB101NQ04LT-VB is widely used in motor control systems, capable of supporting high current and low voltage environments, ensuring fast response and stable operation of motors.
3. **LED drive**: In LED lighting systems, with its excellent switching characteristics, the device can achieve efficient current drive to meet the precise needs of brightness adjustment.
4. **Automotive electronics**: This MOSFET is suitable for automotive power management and power conversion applications, providing reliable performance and ensuring stability under high current conditions, suitable for battery management and motor drive systems.
5. **Consumer Electronics**: In consumer electronics products such as smartphones and tablets, PHB101NQ04LT-VB can be used for power switching and signal conditioning to optimize the energy consumption of the device and improve the overall performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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