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P75N02LSG-VB Product details
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Product Introduction
P75N02LSG-VB is a high-performance single N-channel MOSFET in TO263 package with a designed drain-source voltage (VDS) of 30V and a maximum drain current capability of 70A. Based on advanced Trench technology, the device has a very low on-resistance (RDS(ON) of 6mΩ@VGS=10V), ensuring excellent performance in power management and switching applications. P75N02LSG-VB is well suited for a variety of modern electronic devices, providing excellent efficiency and stability.
P75N02LSG-VB is a high-performance single N-channel MOSFET in TO263 package with a designed drain-source voltage (VDS) of 30V and a maximum drain current capability of 70A. Based on advanced Trench technology, the device has a very low on-resistance (RDS(ON) of 6mΩ@VGS=10V), ensuring excellent performance in power management and switching applications. P75N02LSG-VB is well suited for a variety of modern electronic devices, providing excellent efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: 8mΩ
- @VGS=10V: 6mΩ
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: 8mΩ
- @VGS=10V: 6mΩ
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
P75N02LSG-VB is widely used in multiple fields and modules, including:
1. **Power management**: In DC-DC converters and switching power supplies, this MOSFET can efficiently convert and manage electrical energy, suitable for power distribution, voltage regulation and battery management applications, and improve overall system efficiency.
2. **Motor drive**: In motor control systems, P75N02LSG-VB can be used as a switching element to support efficient motor drive, suitable for industrial automation, home appliances and robotics.
3. **LED drive**: The device performs well in LED lighting, providing stable current and efficient brightness adjustment to meet the needs of smart lighting and energy saving.
4. **Automotive electronics**: In automotive power management and control systems, P75N02LSG-VB is suitable for high current applications, enhancing system safety and reliability, and ensuring the normal operation of vehicle electrical equipment.
5. **High-frequency switching applications**: In wireless communications and other high-frequency applications, the fast switching characteristics of this MOSFET can improve overall performance and meet the high efficiency requirements of modern communication equipment.
Through these applications, the P75N02LSG-VB demonstrates excellent performance in high-power and high-efficiency environments, adapting to the diverse needs of modern electronic products.
P75N02LSG-VB is widely used in multiple fields and modules, including:
1. **Power management**: In DC-DC converters and switching power supplies, this MOSFET can efficiently convert and manage electrical energy, suitable for power distribution, voltage regulation and battery management applications, and improve overall system efficiency.
2. **Motor drive**: In motor control systems, P75N02LSG-VB can be used as a switching element to support efficient motor drive, suitable for industrial automation, home appliances and robotics.
3. **LED drive**: The device performs well in LED lighting, providing stable current and efficient brightness adjustment to meet the needs of smart lighting and energy saving.
4. **Automotive electronics**: In automotive power management and control systems, P75N02LSG-VB is suitable for high current applications, enhancing system safety and reliability, and ensuring the normal operation of vehicle electrical equipment.
5. **High-frequency switching applications**: In wireless communications and other high-frequency applications, the fast switching characteristics of this MOSFET can improve overall performance and meet the high efficiency requirements of modern communication equipment.
Through these applications, the P75N02LSG-VB demonstrates excellent performance in high-power and high-efficiency environments, adapting to the diverse needs of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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