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P70N02LR-VB Product details
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Product Introduction
P70N02LR-VB is a high-efficiency N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of power management and switching circuits. The device has a threshold voltage (Vth) of 1.7V and supports gate-source voltages (VGS) up to ±20V, providing users with flexible control options. With extremely low on-resistance (RDS(ON) of 6mΩ @ VGS = 4.5V and 5mΩ @ VGS = 10V), the P70N02LR-VB enables efficient current transfer under high current conditions, significantly reducing energy losses.
P70N02LR-VB is a high-efficiency N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for a variety of power management and switching circuits. The device has a threshold voltage (Vth) of 1.7V and supports gate-source voltages (VGS) up to ±20V, providing users with flexible control options. With extremely low on-resistance (RDS(ON) of 6mΩ @ VGS = 4.5V and 5mΩ @ VGS = 10V), the P70N02LR-VB enables efficient current transfer under high current conditions, significantly reducing energy losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: P70N02LR-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Model**: P70N02LR-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: P70N02LR-VB is particularly suitable for high-efficiency switching power supply design, and can work stably under low voltage and high current conditions, providing reliable power conversion for electronic devices.
2. **Motor drive**: In motor control applications, this MOSFET can be used as a switching element and is widely used in the drive of DC motors and stepper motors to ensure efficient current transmission and control.
3. **LED drive circuit**: This device performs well in LED drive applications, can provide stable current, ensure uniform brightness of LEDs, and is widely used in lighting and display devices.
4. **Battery management system**: P70N02LR-VB can be used in battery charging and protection circuits as a switching element to prevent overcharging and over-discharging, ensure battery safety and extend its service life.
5. **Consumer electronic devices**: In various consumer electronic products, such as smartphones, tablets, etc., this MOSFET can effectively reduce power consumption and improve overall performance, ensuring the reliability and stability of the equipment.
Through these applications, the P70N02LR-VB provides excellent performance and flexibility for low voltage, high current circuits, making it an ideal choice in a wide range of power and drive circuits.
1. **Power management**: P70N02LR-VB is particularly suitable for high-efficiency switching power supply design, and can work stably under low voltage and high current conditions, providing reliable power conversion for electronic devices.
2. **Motor drive**: In motor control applications, this MOSFET can be used as a switching element and is widely used in the drive of DC motors and stepper motors to ensure efficient current transmission and control.
3. **LED drive circuit**: This device performs well in LED drive applications, can provide stable current, ensure uniform brightness of LEDs, and is widely used in lighting and display devices.
4. **Battery management system**: P70N02LR-VB can be used in battery charging and protection circuits as a switching element to prevent overcharging and over-discharging, ensure battery safety and extend its service life.
5. **Consumer electronic devices**: In various consumer electronic products, such as smartphones, tablets, etc., this MOSFET can effectively reduce power consumption and improve overall performance, ensuring the reliability and stability of the equipment.
Through these applications, the P70N02LR-VB provides excellent performance and flexibility for low voltage, high current circuits, making it an ideal choice in a wide range of power and drive circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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