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P70N02LD-VB Product details
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Product Introduction
P70N02LD-VB is a high-efficiency single N-channel MOSFET in TO252 package with extremely high drain-source voltage (VDS) of 30V and maximum drain current capability of 80A. The device adopts advanced Trench technology to provide very low on-resistance (RDS(ON) is 5mΩ@VGS=10V), ensuring excellent performance in efficient power management and switching applications. P70N02LD-VB is particularly suitable for a variety of modern electronic devices and circuit designs, providing excellent performance and reliability.
P70N02LD-VB is a high-efficiency single N-channel MOSFET in TO252 package with extremely high drain-source voltage (VDS) of 30V and maximum drain current capability of 80A. The device adopts advanced Trench technology to provide very low on-resistance (RDS(ON) is 5mΩ@VGS=10V), ensuring excellent performance in efficient power management and switching applications. P70N02LD-VB is particularly suitable for a variety of modern electronic devices and circuit designs, providing excellent performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: 6mΩ
- @VGS=10V: 5mΩ
- **Drain current (ID)**: 80A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: 6mΩ
- @VGS=10V: 5mΩ
- **Drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and modules
P70N02LD-VB is widely used in multiple fields and modules, including:
1. **Power management**: In DC-DC converters and switching power supplies, this MOSFET can efficiently convert electrical energy, suitable for power distribution and voltage regulation applications, and improve overall system efficiency.
2. **Motor drive**: In motor control systems, P70N02LD-VB can be used as a switching element to support efficient motor drive, suitable for industrial automation and home appliances.
3. **LED drive**: This device performs well in LED lighting applications, can provide stable current, support brightness adjustment, meet the needs of smart lighting and energy saving.
4. **Automotive electronics**: In automotive power management and control systems, P70N02LD-VB has a high current handling capacity to ensure system safety and stability.
5. **High-frequency switching applications**: In RF amplifiers and other high-frequency applications, the fast switching characteristics of this MOSFET can improve overall performance and meet the needs of modern communication equipment.
Through these applications, P70N02LD-VB demonstrates excellent performance in high-power and high-efficiency environments, adapting to the diverse needs of modern electronic products.
P70N02LD-VB is widely used in multiple fields and modules, including:
1. **Power management**: In DC-DC converters and switching power supplies, this MOSFET can efficiently convert electrical energy, suitable for power distribution and voltage regulation applications, and improve overall system efficiency.
2. **Motor drive**: In motor control systems, P70N02LD-VB can be used as a switching element to support efficient motor drive, suitable for industrial automation and home appliances.
3. **LED drive**: This device performs well in LED lighting applications, can provide stable current, support brightness adjustment, meet the needs of smart lighting and energy saving.
4. **Automotive electronics**: In automotive power management and control systems, P70N02LD-VB has a high current handling capacity to ensure system safety and stability.
5. **High-frequency switching applications**: In RF amplifiers and other high-frequency applications, the fast switching characteristics of this MOSFET can improve overall performance and meet the needs of modern communication equipment.
Through these applications, P70N02LD-VB demonstrates excellent performance in high-power and high-efficiency environments, adapting to the diverse needs of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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