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P60N03LDG-VB Product details
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Product Introduction
P60N03LDG-VB is a high-efficiency N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for various power management and switching circuits. The device has a threshold voltage (Vth) of 1.7V and supports gate-source voltage (VGS) up to ±20V, providing users with flexible control options. With extremely low on-resistance (RDS(ON) of 6mΩ @ VGS = 4.5V and 5mΩ @ VGS = 10V), P60N03LDG-VB enables efficient current transfer under high current conditions and reduces energy loss.
P60N03LDG-VB is a high-efficiency N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 30V, suitable for various power management and switching circuits. The device has a threshold voltage (Vth) of 1.7V and supports gate-source voltage (VGS) up to ±20V, providing users with flexible control options. With extremely low on-resistance (RDS(ON) of 6mΩ @ VGS = 4.5V and 5mΩ @ VGS = 10V), P60N03LDG-VB enables efficient current transfer under high current conditions and reduces energy loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: P60N03LDG-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
- **Model**: P60N03LDG-VB
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: P60N03LDG-VB is particularly suitable for switching power supplies and DC-DC converters. It can work efficiently under low voltage and high current conditions to provide stable power output for electronic devices.
2. **Motor drive**: In motor control applications, this MOSFET can be used as a driving element and is suitable for various DC and stepper motors to achieve efficient and precise current control.
3. **LED drive circuit**: This device performs well in LED drive applications, can provide stable current, ensure uniform brightness of LEDs, and is widely used in lighting and display equipment.
4. **Battery management system**: P60N03LDG-VB can be used in battery charging and protection circuits as a switching element to prevent overcharging and over-discharging, ensure battery safety and extend its service life.
5. **Consumer Electronics**: In various consumer electronics products, such as smartphones, tablets, and other portable devices, this MOSFET can effectively reduce power consumption and improve overall performance, ensuring the reliability and stability of the equipment.
Through these applications, the P60N03LDG-VB provides excellent performance and flexibility for low-voltage, high-current circuits, and is an ideal choice for many power and drive circuits.
1. **Power management**: P60N03LDG-VB is particularly suitable for switching power supplies and DC-DC converters. It can work efficiently under low voltage and high current conditions to provide stable power output for electronic devices.
2. **Motor drive**: In motor control applications, this MOSFET can be used as a driving element and is suitable for various DC and stepper motors to achieve efficient and precise current control.
3. **LED drive circuit**: This device performs well in LED drive applications, can provide stable current, ensure uniform brightness of LEDs, and is widely used in lighting and display equipment.
4. **Battery management system**: P60N03LDG-VB can be used in battery charging and protection circuits as a switching element to prevent overcharging and over-discharging, ensure battery safety and extend its service life.
5. **Consumer Electronics**: In various consumer electronics products, such as smartphones, tablets, and other portable devices, this MOSFET can effectively reduce power consumption and improve overall performance, ensuring the reliability and stability of the equipment.
Through these applications, the P60N03LDG-VB provides excellent performance and flexibility for low-voltage, high-current circuits, and is an ideal choice for many power and drive circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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