Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DIP8 |
Dual-N+P |
±60V |
|
±2V |
4.7/-4A |
|
|
42/55mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DIP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DIP8 |
Dual-N+P |
±60V |
|
±2V |
4.7/-4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DIP8 |
Dual-N+P |
±60V |
|
±2V |
4.7/-4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DIP8 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: DIP8
- **Configuration**: Dual NP channel
- **Drain-source voltage (VDS)**: ±60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: ±2V
- **On-resistance (RDS(ON))**:
- @VGS=4.5V: 47mΩ / 60mΩ
- @VGS=10V: 42mΩ / 55mΩ
- **Drain current (ID)**: 4.7A / -4A
- **Technology**: Trench
Domain and module applications：
Application fields and modules
P609-VB is suitable for multiple fields and modules, including:
1. **Power management**: In switching power supplies and DC-DC converters, this MOSFET can efficiently regulate electric energy, suitable for power distribution and voltage regulation applications, and improve system efficiency.
2. **Motor drive**: In motor control systems, P609-VB can be used as a switching element to achieve precise control, suitable for various industrial and consumer electronic devices.
3. **LED drive**: This device is widely used in LED lighting, providing stable current and efficient brightness adjustment to meet the needs of intelligent lighting.
4. **Automotive electronics**: In automotive power management and control systems, P609-VB is suitable for high voltage and current applications to ensure system reliability and safety.
5. **Communication equipment**: In wireless communication and data transmission equipment, the fast switching characteristics of this MOSFET can improve system performance and meet the high efficiency requirements of modern communication equipment.
Through these applications, P609-VB demonstrates its outstanding performance in high performance and reliability, adapting to the diverse needs of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
