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P6010DD-VB Product details
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Product Introduction
The P6010DD-VB is a high-efficiency P-channel MOSFET in a TO252 package designed for negative voltage applications. Its maximum drain-source voltage (VDS) is -100V, making it suitable for use in a variety of power management and switching circuits. The device has a threshold voltage (Vth) of -2V and supports gate-source voltages (VGS) up to ±20V, providing users with flexible control options. With low on-resistance (RDS(ON) of 37mΩ @ VGS = 4.5V and 33mΩ @ VGS = 10V), the P6010DD-VB enables efficient current transfer, reduces energy loss, and ensures stability under high load conditions.
The P6010DD-VB is a high-efficiency P-channel MOSFET in a TO252 package designed for negative voltage applications. Its maximum drain-source voltage (VDS) is -100V, making it suitable for use in a variety of power management and switching circuits. The device has a threshold voltage (Vth) of -2V and supports gate-source voltages (VGS) up to ±20V, providing users with flexible control options. With low on-resistance (RDS(ON) of 37mΩ @ VGS = 4.5V and 33mΩ @ VGS = 10V), the P6010DD-VB enables efficient current transfer, reduces energy loss, and ensures stability under high load conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | 33mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: P6010DD-VB
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 37mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -40A
- **Technology**: Trench
- **Model**: P6010DD-VB
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 37mΩ @ VGS = 4.5V
- 33mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -40A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: P6010DD-VB is suitable for efficient power management circuits, especially in switching power supplies and DC-DC converters under negative voltage conditions to improve energy efficiency and stability.
2. **Motor drive**: In motor control applications, this MOSFET can be used as a switching element, especially for reverse driving of DC motors to ensure efficient current transmission.
3. **Negative power supply applications**: This device is very suitable for negative power supply applications, such as negative voltage converters or management of negative power rails to ensure stable operation in situations where negative voltage is required.
4. **LED drive circuit**: P6010DD-VB can provide precise current control in LED drive circuits to ensure stable brightness of LEDs, suitable for lighting and display devices.
5. **Consumer electronics**: In the power management of various consumer electronic devices, P6010DD-VB can effectively reduce power consumption and improve overall performance, and is widely used in smartphones, tablets and other portable devices.
Through these applications, the P6010DD-VB provides excellent performance and flexibility for negative voltage circuits, making it an ideal choice in a wide range of power supply and drive circuit designs.
1. **Power management**: P6010DD-VB is suitable for efficient power management circuits, especially in switching power supplies and DC-DC converters under negative voltage conditions to improve energy efficiency and stability.
2. **Motor drive**: In motor control applications, this MOSFET can be used as a switching element, especially for reverse driving of DC motors to ensure efficient current transmission.
3. **Negative power supply applications**: This device is very suitable for negative power supply applications, such as negative voltage converters or management of negative power rails to ensure stable operation in situations where negative voltage is required.
4. **LED drive circuit**: P6010DD-VB can provide precise current control in LED drive circuits to ensure stable brightness of LEDs, suitable for lighting and display devices.
5. **Consumer electronics**: In the power management of various consumer electronic devices, P6010DD-VB can effectively reduce power consumption and improve overall performance, and is widely used in smartphones, tablets and other portable devices.
Through these applications, the P6010DD-VB provides excellent performance and flexibility for negative voltage circuits, making it an ideal choice in a wide range of power supply and drive circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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