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P5806ND5G-VB Product details
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Product Introduction
P5806NPG-VB is a high-efficiency dual-channel N+P-type MOSFET in DIP8 package, designed for medium and high voltage applications. The device has bipolar characteristics and a maximum drain-source voltage (VDS) of ±60V, making it suitable for use in various power management and drive circuits. Its threshold voltage (Vth) is approximately ±2V, supporting a gate-source voltage (VGS) of ±20V, providing users with flexible control options. With low on-resistance (RDS(ON) of 47mΩ/60mΩ @ VGS = 4.5V and 42mΩ/55mΩ @ VGS = 10V), P5806NPG-VB enables efficient current transmission and reduces energy loss.
P5806NPG-VB is a high-efficiency dual-channel N+P-type MOSFET in DIP8 package, designed for medium and high voltage applications. The device has bipolar characteristics and a maximum drain-source voltage (VDS) of ±60V, making it suitable for use in various power management and drive circuits. Its threshold voltage (Vth) is approximately ±2V, supporting a gate-source voltage (VGS) of ±20V, providing users with flexible control options. With low on-resistance (RDS(ON) of 47mΩ/60mΩ @ VGS = 4.5V and 42mΩ/55mΩ @ VGS = 10V), P5806NPG-VB enables efficient current transmission and reduces energy loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | 30/50mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
Detailed parameter description
- **Model**: P5806NPG-VB
- **Package**: DIP8
- **Configuration**: Dual-N+P-Channel
- **Maximum drain-source voltage (VDS)**: ±60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: ±2V
- **On-resistance (RDS(ON))**:
- N-Channel: 47mΩ @ VGS = 4.5V, 42mΩ @ VGS = 10V
- P-Channel: 60mΩ @ VGS = 4.5V, 55mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.7A / -4A
- **Technology**: Trench
- **Model**: P5806NPG-VB
- **Package**: DIP8
- **Configuration**: Dual-N+P-Channel
- **Maximum drain-source voltage (VDS)**: ±60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: ±2V
- **On-resistance (RDS(ON))**:
- N-Channel: 47mΩ @ VGS = 4.5V, 42mΩ @ VGS = 10V
- P-Channel: 60mΩ @ VGS = 4.5V, 55mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.7A / -4A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **H-bridge motor drive**: P5806NPG-VB is particularly suitable for H-bridge circuits for bidirectional control of DC motors. It can efficiently drive motors and achieve fast reversal and precise control.
2. **Power management**: This MOSFET is suitable for power converters and DC-DC conversion circuits. As a switching element, it helps improve energy efficiency and stability and is widely used in switching power supplies.
3. **Battery management system**: In battery charging and protection circuits, P5806NPG-VB can be used as a switch to prevent overcharging and over-discharging, ensure battery safety and extend its service life.
4. **LED drive circuit**: This device can also play a role in LED drive applications, providing efficient current control to ensure stable LED brightness, suitable for lighting and display equipment.
5. **Consumer Electronics**: P5806NPG-VB can be used for power management of various consumer electronics products, such as mobile phones, tablets and other portable devices, to help reduce power consumption and improve overall performance.
Through these applications, P5806NPG-VB provides excellent performance and flexibility for medium and high voltage applications, making it an ideal choice in many circuit designs.
1. **H-bridge motor drive**: P5806NPG-VB is particularly suitable for H-bridge circuits for bidirectional control of DC motors. It can efficiently drive motors and achieve fast reversal and precise control.
2. **Power management**: This MOSFET is suitable for power converters and DC-DC conversion circuits. As a switching element, it helps improve energy efficiency and stability and is widely used in switching power supplies.
3. **Battery management system**: In battery charging and protection circuits, P5806NPG-VB can be used as a switch to prevent overcharging and over-discharging, ensure battery safety and extend its service life.
4. **LED drive circuit**: This device can also play a role in LED drive applications, providing efficient current control to ensure stable LED brightness, suitable for lighting and display equipment.
5. **Consumer Electronics**: P5806NPG-VB can be used for power management of various consumer electronics products, such as mobile phones, tablets and other portable devices, to help reduce power consumption and improve overall performance.
Through these applications, P5806NPG-VB provides excellent performance and flexibility for medium and high voltage applications, making it an ideal choice in many circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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