中文
English
P55N02LS-VB Product details
Back to previous pageProduct introduction：
Product Introduction: P55N02LS-VB
P55N02LS-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for high current and low voltage applications. The device has extremely low on-resistance (RDS(ON)) and a wide voltage operating range, making it excellent in various power management and switching applications. With its excellent performance, P55N02LS-VB has become an ideal choice for various electronic circuit designs.
P55N02LS-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for high current and low voltage applications. The device has extremely low on-resistance (RDS(ON)) and a wide voltage operating range, making it excellent in various power management and switching applications. With its excellent performance, P55N02LS-VB has become an ideal choice for various electronic circuit designs.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Model**: P55N02LS-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **ID (leakage current)**: 50A
- **Technology**: Trench technology
- **Model**: P55N02LS-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**:
- 18mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **ID (leakage current)**: 50A
- **Technology**: Trench technology
Domain and module applications：
Application areas and module examples:
1. **Power management**: P55N02LS-VB is widely used in DC-DC converters and power adapters. Its low on-resistance can effectively reduce power consumption and improve conversion efficiency, and is suitable for various power management systems.
2. **Motor drive**: This MOSFET can be used as a switching element in motor control circuits, suitable for power tools and household appliances, providing high current drive capabilities to ensure efficient operation of motors.
3. **LED drive**: In high-power LED lighting systems, P55N02LS-VB can stably provide the required current to ensure the brightness and life of the LED, and is suitable for commercial and industrial lighting applications.
4. **Automotive electronics**: In automotive power management and control modules, P55N02LS-VB can be used for efficient switching and load control to ensure the reliability of functions such as power windows and seat heating.
5. **Consumer electronics**: This MOSFET is also suitable for use in smartphones, tablets and other portable devices to achieve high-efficiency and low-power power switching and improve the endurance of the device.
Through these application examples, P55N02LS-VB demonstrates its wide applicability in multiple fields and meets the design requirements of high efficiency and low power consumption.
1. **Power management**: P55N02LS-VB is widely used in DC-DC converters and power adapters. Its low on-resistance can effectively reduce power consumption and improve conversion efficiency, and is suitable for various power management systems.
2. **Motor drive**: This MOSFET can be used as a switching element in motor control circuits, suitable for power tools and household appliances, providing high current drive capabilities to ensure efficient operation of motors.
3. **LED drive**: In high-power LED lighting systems, P55N02LS-VB can stably provide the required current to ensure the brightness and life of the LED, and is suitable for commercial and industrial lighting applications.
4. **Automotive electronics**: In automotive power management and control modules, P55N02LS-VB can be used for efficient switching and load control to ensure the reliability of functions such as power windows and seat heating.
5. **Consumer electronics**: This MOSFET is also suitable for use in smartphones, tablets and other portable devices to achieve high-efficiency and low-power power switching and improve the endurance of the device.
Through these application examples, P55N02LS-VB demonstrates its wide applicability in multiple fields and meets the design requirements of high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
