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P50N03LS-VB Product details
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P50N03LS-VB Product Introduction
P50N03LS-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for high current and low voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for a variety of power management and switching applications. Its maximum drain current (ID) is 50A, which can meet high load requirements. With a low threshold voltage (Vth) of 1.7V, it can achieve fast turn-on at a low gate drive voltage. At the same time, its on-resistance (RDS(ON)) is 18mΩ at VGS=4.5V and 12mΩ at VGS=10V, which keeps low power consumption at high current.
P50N03LS-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for high current and low voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for a variety of power management and switching applications. Its maximum drain current (ID) is 50A, which can meet high load requirements. With a low threshold voltage (Vth) of 1.7V, it can achieve fast turn-on at a low gate drive voltage. At the same time, its on-resistance (RDS(ON)) is 18mΩ at VGS=4.5V and 12mΩ at VGS=10V, which keeps low power consumption at high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: P50N03LS-VB
- **Package**: TO263
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
- **Model**: P50N03LS-VB
- **Package**: TO263
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**: P50N03LS-VB is well suited for switch mode power supplies (SMPS). Its low on-resistance and high current capability enable it to efficiently convert and manage electrical energy, making it suitable for high-efficiency power supply designs.
2. **Motor control**: In motor drive circuits, this MOSFET can be used as a switching element, especially in brushless DC motor (BLDC) and stepper motor control, providing precise control and high-efficiency performance.
3. **LED drive**: This MOSFET is suitable for LED lighting applications, effectively adjusting the brightness of LEDs, reducing power consumption and improving the thermal efficiency of drive circuits.
4. **Consumer electronics**: In various consumer electronics products, such as smartphones, tablets, etc., P50N03LS-VB can be used in power management modules to ensure that the device operates at high efficiency and low power consumption.
5. **Battery Management System**: This MOSFET can be used for switch control in battery management systems to ensure the safety and efficiency of the charging and discharging process, suitable for electric vehicles and energy storage devices.
The high efficiency and reliable characteristics of the P50N03LS-VB make it an ideal choice for multiple application fields, able to meet the high requirements for power management and switching performance.
1. **Power management**: P50N03LS-VB is well suited for switch mode power supplies (SMPS). Its low on-resistance and high current capability enable it to efficiently convert and manage electrical energy, making it suitable for high-efficiency power supply designs.
2. **Motor control**: In motor drive circuits, this MOSFET can be used as a switching element, especially in brushless DC motor (BLDC) and stepper motor control, providing precise control and high-efficiency performance.
3. **LED drive**: This MOSFET is suitable for LED lighting applications, effectively adjusting the brightness of LEDs, reducing power consumption and improving the thermal efficiency of drive circuits.
4. **Consumer electronics**: In various consumer electronics products, such as smartphones, tablets, etc., P50N03LS-VB can be used in power management modules to ensure that the device operates at high efficiency and low power consumption.
5. **Battery Management System**: This MOSFET can be used for switch control in battery management systems to ensure the safety and efficiency of the charging and discharging process, suitable for electric vehicles and energy storage devices.
The high efficiency and reliable characteristics of the P50N03LS-VB make it an ideal choice for multiple application fields, able to meet the high requirements for power management and switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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