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P50N02LS-VB Product details
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Product Introduction
P50N02LS-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 20V, suitable for use in power management and drive circuits. The device has a threshold voltage (Vth) range of 0.5V to 1.5V and supports gate-source voltage (VGS) up to ±20V, providing users with flexible control options. With its excellent on-resistance (RDS(ON) of 9mΩ @ VGS = 2.5V and 6mΩ @ VGS = 4.5V), P50N02LS-VB can achieve high-efficiency current transmission and reduce energy loss.
P50N02LS-VB is a high-efficiency N-channel MOSFET in TO263 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is 20V, suitable for use in power management and drive circuits. The device has a threshold voltage (Vth) range of 0.5V to 1.5V and supports gate-source voltage (VGS) up to ±20V, providing users with flexible control options. With its excellent on-resistance (RDS(ON) of 9mΩ @ VGS = 2.5V and 6mΩ @ VGS = 4.5V), P50N02LS-VB can achieve high-efficiency current transmission and reduce energy loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: P50N02LS-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 2.5V
- 6mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Model**: P50N02LS-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 2.5V
- 6mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management**: P50N02LS-VB is suitable for use in power management circuits as an efficient switching element to help improve the energy efficiency and stability of power supplies, especially in DC-DC converters.
2. **Motor control**: In DC motor control applications, this MOSFET can be used to drive motors, providing fast switching and high current capabilities to meet the needs of industrial automation and robotics.
3. **LED drive**: P50N02LS-VB is also suitable for use in LED drive circuits, capable of stably controlling the current of LEDs to ensure efficient and uniform lighting effects.
4. **Battery management system**: In battery charging and management systems, this MOSFET can be used as a protection switch to prevent overcharging and over-discharging, improving battery safety and service life.
5. **Consumer electronics**: This device can be used in power control and signal conditioning in a variety of consumer electronics devices to help reduce power consumption and improve overall system performance.
Through the above applications, P50N02LS-VB provides excellent performance and flexibility for low voltage, high current electronic applications, becoming an ideal choice in many circuit designs.
1. **Power management**: P50N02LS-VB is suitable for use in power management circuits as an efficient switching element to help improve the energy efficiency and stability of power supplies, especially in DC-DC converters.
2. **Motor control**: In DC motor control applications, this MOSFET can be used to drive motors, providing fast switching and high current capabilities to meet the needs of industrial automation and robotics.
3. **LED drive**: P50N02LS-VB is also suitable for use in LED drive circuits, capable of stably controlling the current of LEDs to ensure efficient and uniform lighting effects.
4. **Battery management system**: In battery charging and management systems, this MOSFET can be used as a protection switch to prevent overcharging and over-discharging, improving battery safety and service life.
5. **Consumer electronics**: This device can be used in power control and signal conditioning in a variety of consumer electronics devices to help reduce power consumption and improve overall system performance.
Through the above applications, P50N02LS-VB provides excellent performance and flexibility for low voltage, high current electronic applications, becoming an ideal choice in many circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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