P45N02LSG-VB Product details
Product introduction:
P45N02LSG-VB is a high-performance N-channel MOSFET in TO263 package, designed for low voltage and high current applications. Its Trench technology gives the device low on-resistance and high current carrying capacity, making it very suitable for switching and linear regulation circuits. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and it can operate in a wide VGS range, suitable for a variety of application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: P45N02LSG-VB
- **Package**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 50A
- **Technology**: Trench
Domain and module applications:
1. **Power management**: P45N02LSG-VB can be used in power converters as a switching element to help improve the system's energy efficiency and reduce heat generation.
2. **Motor drive**: In DC motor drive applications, this MOSFET can effectively control current and provide efficient driving capabilities, suitable for motor control in industrial and consumer products.
3. **LED drive**: This MOSFET is suitable for use as a switching element in LED drive circuits, and can operate stably under different operating voltages to ensure the brightness and stability of the LED.
4. **Battery management system**: In battery charging and protection circuits, P45N02LSG-VB can be used as a safety switch to prevent overcharging and over-discharging, extending battery life.
5. **Communication equipment**: Suitable for power management and signal conditioning circuits of various communication equipment, helping to reduce power consumption and improve signal quality.
Through these applications, the P45N02LSG-VB provides outstanding performance and flexibility for modern electronic devices.
Technical support:
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