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P3506DD-VB Product details
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P3506DD-VB Product Introduction
P3506DD-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high-voltage applications. The drain-source voltage (VDS) of this MOSFET is -60V, which is suitable for negative voltage operation. Its threshold voltage (Vth) is -1.7V, which enables it to be turned on at a lower gate voltage, with excellent switching characteristics and low on-resistance (RDS(ON)), which is 20mΩ at VGS = 10V. This makes the P3506DD-VB perform well in circuits requiring high current and high efficiency, and is widely used in various power management and switching circuits.
P3506DD-VB is a high-performance single P-channel MOSFET in TO252 package, designed for high-voltage applications. The drain-source voltage (VDS) of this MOSFET is -60V, which is suitable for negative voltage operation. Its threshold voltage (Vth) is -1.7V, which enables it to be turned on at a lower gate voltage, with excellent switching characteristics and low on-resistance (RDS(ON)), which is 20mΩ at VGS = 10V. This makes the P3506DD-VB perform well in circuits requiring high current and high efficiency, and is widely used in various power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: P3506DD-VB
- **Package**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS = 4.5V
- 20mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -50A
- **Technology**: Trench technology
- **Model**: P3506DD-VB
- **Package**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ @ VGS = 4.5V
- 20mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -50A
- **Technology**: Trench technology
Domain and module applications：
Applications and Modules
The P3506DD-VB is suitable for a variety of power management and switching applications, including:
1. **High-voltage Switching Power Supply**: Due to its high drain-source voltage, the P3506DD-VB is ideal for high-voltage switching power supplies (SMPS), providing stable current while ensuring high efficiency.
2. **Inverter**: In inverter design, this MOSFET can be used to control the load to ensure efficient and safe current flow, especially suitable for renewable energy systems (such as solar inverters).
3. **Motor Drive**: The high current handling capability of the P3506DD-VB makes it an ideal choice for motor control modules, suitable for brushless motor (BLDC) and stepper motor drives, improving drive efficiency.
4. **Battery Management System**: This MOSFET is also suitable for battery management systems (BMS), which can effectively control current during charging and discharging, improving battery performance and life.
5. **Load switch**: P3506DD-VB is suitable for various load switches, especially in circuits that require negative voltage operation, which can ensure efficient switch control and adapt to a variety of application scenarios.
In summary, P3506DD-VB is a high-performance P-channel MOSFET that meets the performance requirements of modern electronic products in high-voltage applications.
The P3506DD-VB is suitable for a variety of power management and switching applications, including:
1. **High-voltage Switching Power Supply**: Due to its high drain-source voltage, the P3506DD-VB is ideal for high-voltage switching power supplies (SMPS), providing stable current while ensuring high efficiency.
2. **Inverter**: In inverter design, this MOSFET can be used to control the load to ensure efficient and safe current flow, especially suitable for renewable energy systems (such as solar inverters).
3. **Motor Drive**: The high current handling capability of the P3506DD-VB makes it an ideal choice for motor control modules, suitable for brushless motor (BLDC) and stepper motor drives, improving drive efficiency.
4. **Battery Management System**: This MOSFET is also suitable for battery management systems (BMS), which can effectively control current during charging and discharging, improving battery performance and life.
5. **Load switch**: P3506DD-VB is suitable for various load switches, especially in circuits that require negative voltage operation, which can ensure efficient switch control and adapt to a variety of application scenarios.
In summary, P3506DD-VB is a high-performance P-channel MOSFET that meets the performance requirements of modern electronic products in high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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