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P3056LDG-VB Product details
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The following is a product introduction, detailed parameter description, and description of applicable fields and modules of the P3056LDG-VB MOSFET:
### 1. Product Introduction
P3056LDG-VB is a high-performance single N-channel MOSFET in TO252 package. It has excellent current handling capability and low on-resistance, and is suitable for a variety of high-efficiency switching power supplies and motor drive applications. The device has a VDS of 30V, supports a VGS voltage of ±20V, has a fast switching response and superior thermal performance, making it an excellent performer in a variety of electronic devices. The P3056LDG-VB is particularly suitable for application scenarios that require high current handling and low conduction losses.
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### 1. Product Introduction
P3056LDG-VB is a high-performance single N-channel MOSFET in TO252 package. It has excellent current handling capability and low on-resistance, and is suitable for a variety of high-efficiency switching power supplies and motor drive applications. The device has a VDS of 30V, supports a VGS voltage of ±20V, has a fast switching response and superior thermal performance, making it an excellent performer in a variety of electronic devices. The P3056LDG-VB is particularly suitable for application scenarios that require high current handling and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Model**: P3056LDG-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ (at VGS=4.5V)
- 7mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
- **Model**: P3056LDG-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ (at VGS=4.5V)
- 7mΩ (at VGS=10V)
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench technology
Domain and module applications：
056LDG-VB MOSFET is suitable for multiple fields and modules, including but not limited to:
1. **Switching power supply**: Due to its low on-resistance and high current handling capability, P3056LDG-VB is widely used in DC-DC converters and AC-DC power supplies to improve energy efficiency and reduce power consumption.
2. **Motor drive**: This MOSFET can provide fast switching response in motor drive applications, suitable for DC motor and brushless motor control, improve motor efficiency and extend service life.
3. **Battery management system**: In battery charge and discharge management, the low RDS(ON) characteristics of P3056LDG-VB can effectively reduce energy loss and improve the overall energy efficiency of the system, suitable for electric vehicles and energy storage devices.
4. **LED drive circuit**: In LED lighting and backlight applications, P3056LDG-VB can achieve efficient switching control, ensure stable light output, and reduce heat generation.
Through these features and applications, the P3056LDG-VB MOSFET provides design engineers with an efficient and reliable solution to meet the performance and efficiency requirements of modern electronic devices.
1. **Switching power supply**: Due to its low on-resistance and high current handling capability, P3056LDG-VB is widely used in DC-DC converters and AC-DC power supplies to improve energy efficiency and reduce power consumption.
2. **Motor drive**: This MOSFET can provide fast switching response in motor drive applications, suitable for DC motor and brushless motor control, improve motor efficiency and extend service life.
3. **Battery management system**: In battery charge and discharge management, the low RDS(ON) characteristics of P3056LDG-VB can effectively reduce energy loss and improve the overall energy efficiency of the system, suitable for electric vehicles and energy storage devices.
4. **LED drive circuit**: In LED lighting and backlight applications, P3056LDG-VB can achieve efficient switching control, ensure stable light output, and reduce heat generation.
Through these features and applications, the P3056LDG-VB MOSFET provides design engineers with an efficient and reliable solution to meet the performance and efficiency requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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