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P3055LDG-VB Product details

Product introduction:

P3055LDG-VB MOSFET Product Introduction

P3055LDG-VB is a high-efficiency N-channel MOSFET designed for applications with high current and low conduction loss. The device uses advanced Trench technology to improve switching speed and power efficiency, and is suitable for high-frequency circuits and power management in harsh environments. Its drain-source voltage (V_DS) is 30V and the drain current (I_D) is up to 70A, which can provide stable performance under harsh conditions. The TO252 package of P3055LDG-VB is suitable for high-density installation occasions, especially for power-intensive modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 70A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
P3055LDG-VB Detailed parameter description

- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (V_DS)**: 30V, suitable for low to medium voltage applications
- **Gate voltage (V_GS)**: ±20V, with a higher operating margin
- **Threshold voltage (V_th)**: 1.7V, supports low voltage turn-on, easy to use in low power systems
- **On-resistance (R_DS(ON))**:
- 9mΩ at a gate voltage of 4.5V
- 7mΩ at a gate voltage of 10V
- **Drain current (I_D)**: 70A, suitable for high current transmission requirements
- **Technology type**: Trench technology, which improves switching performance and reduces conduction losses

Domain and module applications:

Application fields and modules of P3055LDG-VB

1. **Motor drive circuit**: Due to its higher current capability, P3055LDG-VB is an ideal choice in motor drive circuits and can stably handle high current loads. In various electric equipment and industrial automation systems, it helps to provide efficient and reliable motor control.

2. **Power converter**: P3055LDG-VB is ideal for low-voltage power converters (such as step-down DC-DC converters), and its low on-resistance and efficient switching characteristics can significantly reduce energy losses during the conversion process.

3. **Automotive electronics**: The low conduction loss and stability of this MOSFET make it suitable for automotive electronic systems such as battery management systems (BMS) and on-board power management. In these applications, P3055LDG-VB can optimize battery life and provide efficient power management.

4. **High-power load switch**: The low R_DS(ON) characteristics of P3055LDG-VB are particularly suitable for high-power load switch applications that require frequent switching, such as power distribution circuits in servers and communication equipment, effectively reducing system power consumption and increasing switching speed.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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