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P3055E-VB Product details
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P3055E-VB Product Introduction
P3055E-VB is a single N-channel MOSFET in TO252 package, designed for medium voltage and high current applications, providing 60V drain-source voltage (VDS) and ±20V gate-source voltage (VGS) limits. Its threshold voltage (Vth) is 1.7V, and the on-resistance (RDS(ON)) is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V. This MOSFET has a maximum drain current (ID) of up to 18A, and achieves excellent switching performance and high efficiency through advanced trench technology, giving it good thermal performance and low energy consumption in power management applications.
P3055E-VB is a single N-channel MOSFET in TO252 package, designed for medium voltage and high current applications, providing 60V drain-source voltage (VDS) and ±20V gate-source voltage (VGS) limits. Its threshold voltage (Vth) is 1.7V, and the on-resistance (RDS(ON)) is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V. This MOSFET has a maximum drain current (ID) of up to 18A, and achieves excellent switching performance and high efficiency through advanced trench technology, giving it good thermal performance and low energy consumption in power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
P3055E-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology type**: Trench technology
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology type**: Trench technology
Domain and module applications：
Applications and modules
1. **Power management and DC-DC converters**
P3055E-VB is very suitable for DC-DC converters in power management systems. It has high current capability and low on-resistance, which can reduce system power consumption and improve efficiency. This device is particularly suitable for high-efficiency, low-noise power modules.
2. **Consumer electronics**
In consumer electronics such as laptops and mobile phone chargers, this MOSFET can be used for protection and power control modules. With its medium voltage capability and good thermal management characteristics, it helps to achieve miniaturization of equipment and extend the battery life of the equipment.
3. **Industrial control and drive modules**
In the field of industrial automation and small drive motor control, the trench technology of P3055E-VB makes it suitable for applications with higher switching frequencies. Its stable drain-source voltage and low on-resistance provide stable power transmission and low heat generation.
4. **Automotive electronic modules**
P3055E-VB is suitable for relay drive and load switch applications in automotive electronic systems. Its reliability and high current handling capability at 60V make it suitable for automotive power management modules that require high efficiency and stability, such as BMS systems and lighting control.
1. **Power management and DC-DC converters**
P3055E-VB is very suitable for DC-DC converters in power management systems. It has high current capability and low on-resistance, which can reduce system power consumption and improve efficiency. This device is particularly suitable for high-efficiency, low-noise power modules.
2. **Consumer electronics**
In consumer electronics such as laptops and mobile phone chargers, this MOSFET can be used for protection and power control modules. With its medium voltage capability and good thermal management characteristics, it helps to achieve miniaturization of equipment and extend the battery life of the equipment.
3. **Industrial control and drive modules**
In the field of industrial automation and small drive motor control, the trench technology of P3055E-VB makes it suitable for applications with higher switching frequencies. Its stable drain-source voltage and low on-resistance provide stable power transmission and low heat generation.
4. **Automotive electronic modules**
P3055E-VB is suitable for relay drive and load switch applications in automotive electronic systems. Its reliability and high current handling capability at 60V make it suitable for automotive power management modules that require high efficiency and stability, such as BMS systems and lighting control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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