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P2N04L03-VB Product details
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P2N04L03-VB Product Introduction
P2N04L03-VB is a high-efficiency dual N-channel MOSFET in TO263-7L package, designed for high power and high current applications. Its low on-resistance and excellent switching performance enable it to perform well in a variety of power management and motor control fields, meeting the stringent requirements for high efficiency and reliability.
P2N04L03-VB is a high-efficiency dual N-channel MOSFET in TO263-7L package, designed for high power and high current applications. Its low on-resistance and excellent switching performance enable it to perform well in a variety of power management and motor control fields, meeting the stringent requirements for high efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
Detailed parameter description
- **Model**: P2N04L03-VB
- **Package**: TO263-7L
- **Configuration**: Dual N+N channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **Drain-source resistance (RDS(ON))**:
- 1 mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 200A
- **Technology**: Trench technology
- **Model**: P2N04L03-VB
- **Package**: TO263-7L
- **Configuration**: Dual N+N channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **Drain-source resistance (RDS(ON))**:
- 1 mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 200A
- **Technology**: Trench technology
Domain and module applications：
Applications and Module Examples
The design of P2N04L03-VB makes it widely used in multiple fields and modules:
1. **Power Converter**: This MOSFET is very suitable for use in switch mode power supplies (SMPS) and DC-DC converters, and can efficiently manage power conversion and improve the overall efficiency of the system.
2. **Motor Drive**: In motor control systems, due to its high current carrying capacity, P2N04L03-VB can achieve fast motor start and stop control, suitable for applications such as industrial automation and power tools.
3. **Battery Management System**: In battery charge and discharge management, the device can efficiently switch current to ensure safe use and long life of the battery, suitable for electric vehicles and renewable energy storage systems.
4. **High-Performance Audio Amplifier**: Due to its low on-resistance, this MOSFET can be used in high-fidelity audio amplifiers to provide stable power output and high-quality audio signals.
Through these applications, the P2N04L03-VB demonstrates its wide applicability in high-performance, high-current and multi-function applications to meet the needs of modern electronic devices.
The design of P2N04L03-VB makes it widely used in multiple fields and modules:
1. **Power Converter**: This MOSFET is very suitable for use in switch mode power supplies (SMPS) and DC-DC converters, and can efficiently manage power conversion and improve the overall efficiency of the system.
2. **Motor Drive**: In motor control systems, due to its high current carrying capacity, P2N04L03-VB can achieve fast motor start and stop control, suitable for applications such as industrial automation and power tools.
3. **Battery Management System**: In battery charge and discharge management, the device can efficiently switch current to ensure safe use and long life of the battery, suitable for electric vehicles and renewable energy storage systems.
4. **High-Performance Audio Amplifier**: Due to its low on-resistance, this MOSFET can be used in high-fidelity audio amplifiers to provide stable power output and high-quality audio signals.
Through these applications, the P2N04L03-VB demonstrates its wide applicability in high-performance, high-current and multi-function applications to meet the needs of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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