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P2N0403-VB Product details
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P2N0403-VB Product Introduction
P2N0403-VB is a high-performance dual-channel N-type MOSFET in TO263-7L package, designed for efficient power management and switching applications. It has extremely low on-resistance and high current handling capability, suitable for a variety of high-power applications. This dual-channel design enables more flexible circuit design and space saving in the same package.
P2N0403-VB is a high-performance dual-channel N-type MOSFET in TO263-7L package, designed for efficient power management and switching applications. It has extremely low on-resistance and high current handling capability, suitable for a variety of high-power applications. This dual-channel design enables more flexible circuit design and space saving in the same package.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | 1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 200A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
Detailed parameter description
- **Model**: P2N0403-VB
- **Package**: TO263-7L
- **Configuration**: Dual channel N+N type
- **Drain source voltage (VDS)**: 40V
- **Gate source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ @ VGS=10V
- **Maximum drain current (ID)**: 200A
- **Technology**: Trench
- **Model**: P2N0403-VB
- **Package**: TO263-7L
- **Configuration**: Dual channel N+N type
- **Drain source voltage (VDS)**: 40V
- **Gate source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 1mΩ @ VGS=10V
- **Maximum drain current (ID)**: 200A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power management systems**: P2N0403-VB is widely used in high-efficiency DC-DC converters and power modules. Its low on-resistance helps improve overall system efficiency and reduce energy loss.
2. **Electric vehicles**: In the power management and drive systems of electric vehicles, this MOSFET can effectively control the motor and battery charging process to ensure efficient operation of the system.
3. **Servers and data centers**: Suitable for high-performance computing and server power management, P2N0403-VB can handle high currents and ensure stable power supply.
4. **Industrial equipment**: In industrial automation equipment, this MOSFET is used for power distribution and motor control to ensure efficient and safe operation of the equipment.
5. **Consumer electronics**: P2N0403-VB can be used for power management of various electronic devices to optimize power usage and improve device performance.
With its high current carrying capability and excellent switching performance, P2N0403-VB is an ideal choice for modern high-efficiency power management systems.
1. **Power management systems**: P2N0403-VB is widely used in high-efficiency DC-DC converters and power modules. Its low on-resistance helps improve overall system efficiency and reduce energy loss.
2. **Electric vehicles**: In the power management and drive systems of electric vehicles, this MOSFET can effectively control the motor and battery charging process to ensure efficient operation of the system.
3. **Servers and data centers**: Suitable for high-performance computing and server power management, P2N0403-VB can handle high currents and ensure stable power supply.
4. **Industrial equipment**: In industrial automation equipment, this MOSFET is used for power distribution and motor control to ensure efficient and safe operation of the equipment.
5. **Consumer electronics**: P2N0403-VB can be used for power management of various electronic devices to optimize power usage and improve device performance.
With its high current carrying capability and excellent switching performance, P2N0403-VB is an ideal choice for modern high-efficiency power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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