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P2904BDG-VB Product details
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Product Introduction
P2904BDG-VB is a high-efficiency single-channel N-type MOSFET in TO252 package, designed for low-voltage applications. Its excellent RDS(ON) characteristics and high leakage current capability make it excellent in power management and switching applications, and it is a common key component in modern electronic devices.
P2904BDG-VB is a high-efficiency single-channel N-type MOSFET in TO252 package, designed for low-voltage applications. Its excellent RDS(ON) characteristics and high leakage current capability make it excellent in power management and switching applications, and it is a common key component in modern electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO252
- **Configuration**: Single N-type
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 55A
- **Technology**: Trench
- **Package**: TO252
- **Configuration**: Single N-type
- **Maximum drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 55A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: P2904BDG-VB is widely used in various power management systems, such as DC-DC converters, switching power supplies and battery management systems. It can withstand drain-source voltages up to 40V, which gives it good stability in these applications. In addition, this MOSFET is suitable for motor drives, LED lighting and consumer electronics, because its low on-resistance can significantly improve system efficiency and reduce energy loss and heat generation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
