中文
English
P2504EI-VB Product details
Back to previous pageProduct introduction：
Product Introduction
P2504EI-VB is a high-efficiency single-channel P-type MOSFET in TO251 package, suitable for a variety of power management and switching applications. Its low RDS(ON) value enables it to perform well under high current conditions and can effectively reduce power consumption.
P2504EI-VB is a high-efficiency single-channel P-type MOSFET in TO251 package, suitable for a variety of power management and switching applications. Its low RDS(ON) value enables it to perform well under high current conditions and can effectively reduce power consumption.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -40V | -2V | -55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
- **Package**: TO251
- **Configuration**: Single P type
- **Maximum drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -55A
- **Technology**: Trench
- **Package**: TO251
- **Configuration**: Single P type
- **Maximum drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 10mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -55A
- **Technology**: Trench
Domain and module applications：
Application fields and modules: P2504EI-VB is widely used in power management systems, such as DC-DC converters and battery management systems, and is particularly suitable for high-efficiency power switches and load switch modules. In addition, this MOSFET can also be used in motor drive, LED drive and automation control, etc., because of its excellent conductivity and stability, the energy efficiency of the equipment can be improved.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
