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P2504BSG-VB Product details
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Product Introduction
P2504BSG-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high efficiency and high power applications. The device has excellent on-resistance and thermal performance, suitable for use under harsh working conditions, and is widely used in power management, motor drive and other circuits requiring efficient switching.
P2504BSG-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high efficiency and high power applications. The device has excellent on-resistance and thermal performance, suitable for use under harsh working conditions, and is widely used in power management, motor drive and other circuits requiring efficient switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: P2504BSG-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench technology
- **Model**: P2504BSG-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 35mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 50A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**: P2504BSG-VB provides high-efficiency switching in DC-DC converters, which can effectively reduce power consumption and extend battery life.
2. **Motor drive**: In motor control applications, MOSFET can quickly switch current, which helps to improve the response speed and working efficiency of the motor.
3. **Charger**: This MOSFET is suitable for high-efficiency charger design, which can achieve fast charging and reduce heat.
4. **Automotive electronics**: In automotive power management and drive systems, this device can provide stable and reliable performance to adapt to the harsh environmental conditions of the car.
5. **Home appliances**: P2504BSG-VB can be used for switching power supplies of smart home appliances to improve the energy efficiency and reliability of the system.
This type of MOSFET has become an ideal choice in modern electronic design due to its superior performance and wide applicability.
1. **Power management**: P2504BSG-VB provides high-efficiency switching in DC-DC converters, which can effectively reduce power consumption and extend battery life.
2. **Motor drive**: In motor control applications, MOSFET can quickly switch current, which helps to improve the response speed and working efficiency of the motor.
3. **Charger**: This MOSFET is suitable for high-efficiency charger design, which can achieve fast charging and reduce heat.
4. **Automotive electronics**: In automotive power management and drive systems, this device can provide stable and reliable performance to adapt to the harsh environmental conditions of the car.
5. **Home appliances**: P2504BSG-VB can be used for switching power supplies of smart home appliances to improve the energy efficiency and reliability of the system.
This type of MOSFET has become an ideal choice in modern electronic design due to its superior performance and wide applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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