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P2504BDG-VB Product details
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P2504BDG-VB Product Introduction
P2504BDG-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for a variety of electronic applications. The device has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of 20V, and provides excellent on-resistance (RDS(ON)), which is 14mΩ at VGS of 4.5V and 12mΩ at VGS of 10V, and the maximum continuous current (ID) reaches 55A. It uses advanced Trench technology to ensure good performance and reliability in high-frequency and high-power applications.
P2504BDG-VB is a high-performance single N-channel MOSFET in TO252 package, suitable for a variety of electronic applications. The device has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of 20V, and provides excellent on-resistance (RDS(ON)), which is 14mΩ at VGS of 4.5V and 12mΩ at VGS of 10V, and the maximum continuous current (ID) reaches 55A. It uses advanced Trench technology to ensure good performance and reliability in high-frequency and high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: P2504BDG-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum current (ID)**: 55A
- **Technology**: Trench
- **Model**: P2504BDG-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum current (ID)**: 55A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**: P2504BDG-VB can be used in DC-DC converters in switching power supplies. Due to its low RDS(ON) characteristics, it can effectively reduce power loss and improve system efficiency.
2. **Motor drive**: In motor drive modules, this MOSFET is suitable for controlling the start and stop and speed regulation of motors, especially in applications that require fast switching and high current.
3. **LED drive**: This device is also suitable for LED drive circuits. Due to its high current handling capability and low heat loss, it can provide stable current for LEDs.
4. **Battery management system**: In battery management systems, P2504BDG-VB can be used as a switching element to effectively control the charging and discharging process to ensure system safety and efficiency.
5. **Automotive electronics**: This MOSFET is also suitable for automotive power management systems, such as power systems and lighting control, and can meet the application requirements of high temperature and high current.
Through the above introduction, it can be seen that P2504BDG-VB has broad application potential in many fields.
1. **Power management**: P2504BDG-VB can be used in DC-DC converters in switching power supplies. Due to its low RDS(ON) characteristics, it can effectively reduce power loss and improve system efficiency.
2. **Motor drive**: In motor drive modules, this MOSFET is suitable for controlling the start and stop and speed regulation of motors, especially in applications that require fast switching and high current.
3. **LED drive**: This device is also suitable for LED drive circuits. Due to its high current handling capability and low heat loss, it can provide stable current for LEDs.
4. **Battery management system**: In battery management systems, P2504BDG-VB can be used as a switching element to effectively control the charging and discharging process to ensure system safety and efficiency.
5. **Automotive electronics**: This MOSFET is also suitable for automotive power management systems, such as power systems and lighting control, and can meet the application requirements of high temperature and high current.
Through the above introduction, it can be seen that P2504BDG-VB has broad application potential in many fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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