P2503ND5G-VB Product details
Product introduction:
P2503ND5G-VB is a high-performance common-source and common-drain N+P-channel MOSFET in TO252-4L package, designed for efficient power management and switching applications. This MOSFET supports a drain-source voltage (VDS) of ±60V, suitable for bidirectional current applications. Its threshold voltage (Vth) is 1.8V (N-channel) and -1.7V (P-channel), ensuring reliable conduction at a lower gate drive voltage. The on-resistance (RDS(ON)) of P2503ND5G-VB is 33mΩ / 60mΩ and 30mΩ / 50mΩ at VGS of 4.5V and 10V, respectively. It has excellent conduction performance and low power consumption, and is very suitable for high-efficiency circuit design.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | 30/50mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
- **Model**: P2503ND5G-VB
- **Package**: TO252-4L
- **Configuration**: Common source and common drain N+P channel
- **Maximum drain-source voltage (VDS)**: ±60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N channel: 1.8V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- N channel:
- 33mΩ (VGS=4.5V)
- 30mΩ (VGS=10V)
- P channel:
- 60mΩ (VGS=4.5V)
- 50mΩ (VGS=10V)
- **Maximum Drain Current (ID)**:
- N-Channel: 35A
- P-Channel: -19A
- **Technology**: Trench
Domain and module applications:
P2503ND5G-VB MOSFET has a wide range of applications in many fields. The following are some typical application examples:
1. **DC-DC converter**:
- Used as a switching element in an efficient DC-DC converter to provide efficient power conversion, reduce energy loss, and improve the overall efficiency of the system.
2. **Power management system**:
- Used in power management ICs to support efficient power distribution and management to ensure the stability of the device under different working conditions.
3. **Motor drive**:
- In DC motor drive applications, as a switch in the H-bridge circuit, it can provide precise current control and efficient driving performance.
4. **LED drive circuit**:
- Used in LED lighting solutions to support efficient power output and stable drive to ensure the brightness and service life of the LED.
5. **Portable devices**:
- Used in mobile devices and consumer electronics to optimize power management, improve battery efficiency and extend battery life.
The excellent performance of P2503ND5G-VB makes it an ideal choice in a variety of applications, meeting the needs of different industries for efficient and reliable power management solutions.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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