中文
English
P2204ND5G-VB Product details
Back to previous pageProduct introduction：
Product Introduction
P2204ND5G-VB is a high-performance common-source N+P-type MOSFET in TO252-4L package, designed for high-efficiency power electronics applications. Its maximum drain-source voltage (VDS) is ±40V, which is suitable for medium-voltage circuits. The threshold voltage (Vth) of the device is 1.8V and -1.7V, respectively, ensuring efficient switching at low gate-source voltage. P2204ND5G-VB has extremely low on-resistance (RDS(ON) is 14mΩ and 16mΩ, respectively, at VGS=4.5V and 10V), which effectively reduces power loss and improves system energy efficiency, and is suitable for a variety of demanding power management applications.
P2204ND5G-VB is a high-performance common-source N+P-type MOSFET in TO252-4L package, designed for high-efficiency power electronics applications. Its maximum drain-source voltage (VDS) is ±40V, which is suitable for medium-voltage circuits. The threshold voltage (Vth) of the device is 1.8V and -1.7V, respectively, ensuring efficient switching at low gate-source voltage. P2204ND5G-VB has extremely low on-resistance (RDS(ON) is 14mΩ and 16mΩ, respectively, at VGS=4.5V and 10V), which effectively reduces power loss and improves system energy efficiency, and is suitable for a variety of demanding power management applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | 16/16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
Detailed parameter description
- **Model**: P2204ND5G-VB
- **Package**: TO252-4L
- **Configuration**: Common source N+P type
- **Maximum drain-source voltage (VDS)**: ±40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V (N channel) / -1.7V (P channel)
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V (N channel)
- 14mΩ @ VGS = 4.5V (P channel)
- 16mΩ @ VGS = 10V (N channel)
- 16mΩ @ VGS = 10V (P channel)
- **Maximum leakage current (ID)**: ±50A
- **Technology**: Trench technology
- **Model**: P2204ND5G-VB
- **Package**: TO252-4L
- **Configuration**: Common source N+P type
- **Maximum drain-source voltage (VDS)**: ±40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V (N channel) / -1.7V (P channel)
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V (N channel)
- 14mΩ @ VGS = 4.5V (P channel)
- 16mΩ @ VGS = 10V (N channel)
- 16mΩ @ VGS = 10V (P channel)
- **Maximum leakage current (ID)**: ±50A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules
P2204ND5G-VB shows excellent performance in many fields. In **power management** system, this MOSFET can effectively control the switching of power supply with its low on-resistance and high current carrying capacity. It is widely used in DC-DC converters and switching power supplies (SMPS) to improve power conversion efficiency.
In **motor drive** application, P2204ND5G-VB, as a key switching element in the H-bridge circuit, can accurately control the start and stop of the motor, ensure the stability and safety of the motor under different working conditions, and is suitable for various motor control systems.
In addition, the device performs well in **LED drive**, can provide stable current for LED, improve lighting efficiency and extend the service life of LED.
In **battery management system**, P2204ND5G-VB can achieve efficient power switching and protection, ensure that the battery operates under safe and stable conditions, and optimize its charging and discharging performance. Through these applications, P2204ND5G-VB has become an important key component in modern power electronics technology.
P2204ND5G-VB shows excellent performance in many fields. In **power management** system, this MOSFET can effectively control the switching of power supply with its low on-resistance and high current carrying capacity. It is widely used in DC-DC converters and switching power supplies (SMPS) to improve power conversion efficiency.
In **motor drive** application, P2204ND5G-VB, as a key switching element in the H-bridge circuit, can accurately control the start and stop of the motor, ensure the stability and safety of the motor under different working conditions, and is suitable for various motor control systems.
In addition, the device performs well in **LED drive**, can provide stable current for LED, improve lighting efficiency and extend the service life of LED.
In **battery management system**, P2204ND5G-VB can achieve efficient power switching and protection, ensure that the battery operates under safe and stable conditions, and optimize its charging and discharging performance. Through these applications, P2204ND5G-VB has become an important key component in modern power electronics technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
