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P2103ND5G-VB Product details
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Product Introduction
P2103ND5G-VB is a cascode N+P channel MOSFET in TO252-4L package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of ±60V, the device is suitable for circuits requiring positive and negative voltage control. Its threshold voltage (Vth) is 1.8V (N channel) and -1.7V (P channel), respectively, which is suitable for a variety of drive and control scenarios. The low on-resistance (RDS(ON)) performs well at different gate voltages, ensuring high efficiency and low loss in switching applications, and is widely used in power management and drive circuits.
P2103ND5G-VB is a cascode N+P channel MOSFET in TO252-4L package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of ±60V, the device is suitable for circuits requiring positive and negative voltage control. Its threshold voltage (Vth) is 1.8V (N channel) and -1.7V (P channel), respectively, which is suitable for a variety of drive and control scenarios. The low on-resistance (RDS(ON)) performs well at different gate voltages, ensuring high efficiency and low loss in switching applications, and is widely used in power management and drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | 30/50mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±60V | 1.8/-1.7V | 35/-19A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
Detailed parameter description
- **Model**: P2103ND5G-VB
- **Package**: TO252-4L
- **Configuration**: Cascode-N+P-Channel
- **Drain-Source Voltage (VDS)**: ±60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**:
- N Channel: 1.8V
- P Channel: -1.7V
- **On-Resistance (RDS(ON))**:
- N Channel: 33mΩ @ VGS=4.5V, 30mΩ @ VGS=10V
- P Channel: 60mΩ @ VGS=4.5V, 50mΩ @ VGS=10V
- **Maximum Drain Current (ID)**:
- N Channel: 35A
- P channel: -19A
- **Technology**: Trench technology
- **Model**: P2103ND5G-VB
- **Package**: TO252-4L
- **Configuration**: Cascode-N+P-Channel
- **Drain-Source Voltage (VDS)**: ±60V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**:
- N Channel: 1.8V
- P Channel: -1.7V
- **On-Resistance (RDS(ON))**:
- N Channel: 33mΩ @ VGS=4.5V, 30mΩ @ VGS=10V
- P Channel: 60mΩ @ VGS=4.5V, 50mΩ @ VGS=10V
- **Maximum Drain Current (ID)**:
- N Channel: 35A
- P channel: -19A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
1. **Power management**: P2103ND5G-VB is widely used in DC-DC converters and switching power supplies, especially in positive and negative voltage conversion circuits. It can achieve efficient power conversion and is suitable for high-efficiency power adapters and battery chargers.
2. **Motor drive**: This MOSFET is suitable for H-bridge motor control circuits, which can realize the forward and reverse rotation and speed regulation of the motor. It is widely used in electric vehicles, industrial automation and robots, etc., to improve the flexibility and response speed of the drive system.
3. **Load switch**: In various load switch applications, P2103ND5G-VB can be used to efficiently control the switching state of the load, which is suitable for power management of consumer electronics, household appliances and industrial equipment.
4. **Inverter**: This MOSFET has good performance in solar inverters and other renewable energy applications, and can realize the conversion and management of electric energy at high efficiency, which is suitable for various energy storage systems.
With its excellent electrical performance and diverse application scenarios, P2103ND5G-VB is one of the most important components in modern electronic design.
1. **Power management**: P2103ND5G-VB is widely used in DC-DC converters and switching power supplies, especially in positive and negative voltage conversion circuits. It can achieve efficient power conversion and is suitable for high-efficiency power adapters and battery chargers.
2. **Motor drive**: This MOSFET is suitable for H-bridge motor control circuits, which can realize the forward and reverse rotation and speed regulation of the motor. It is widely used in electric vehicles, industrial automation and robots, etc., to improve the flexibility and response speed of the drive system.
3. **Load switch**: In various load switch applications, P2103ND5G-VB can be used to efficiently control the switching state of the load, which is suitable for power management of consumer electronics, household appliances and industrial equipment.
4. **Inverter**: This MOSFET has good performance in solar inverters and other renewable energy applications, and can realize the conversion and management of electric energy at high efficiency, which is suitable for various energy storage systems.
With its excellent electrical performance and diverse application scenarios, P2103ND5G-VB is one of the most important components in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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