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P20NM60-VB Product details

Product introduction:

Product Introduction
The P20NM60-VB is a high-voltage N-channel MOSFET in a TO220 package designed for high-voltage applications. The device has a maximum drain-source voltage (VDS) of up to 650V, making it suitable for a variety of power management and switching applications. The P20NM60-VB has an on-resistance (RDS(ON)) of 160mΩ at a gate voltage of 10V, and can achieve efficient current transmission at a maximum drain current (ID) of 20A, ensuring system reliability and performance. This MOSFET uses SJ_Multi-EPI technology to optimize thermal management and conductivity, enabling it to perform well under high load and high voltage environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description
- **Model**: P20NM60-VB
- **Package**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 20A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Applications and modules: P20NM60-VB is widely used in power management, inverters, high-voltage switching power supplies and other fields. In power management, this MOSFET is suitable for high-voltage DC-DC converters, which can provide efficient power conversion and stable output. In inverters, it can be used for power conversion in photovoltaic power generation and wind energy systems to improve the utilization efficiency of renewable energy. In addition, in high-voltage switching power supply design, P20NM60-VB can ensure high efficiency and long-term stable operation of the system with low conduction loss and high current carrying capacity, making it an ideal choice for modern high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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