中文
English
P2003ND5G-VB Product details
Back to previous pageProduct introduction：
Product Introduction
P2003ND5G-VB is a high-performance common-source N+P-type MOSFET in TO252-4L package, designed for high-efficiency power electronics applications. Its maximum drain-source voltage (VDS) is ±40V, which is suitable for medium-voltage circuits. The threshold voltage (Vth) of the device is 1.8V and -1.7V, respectively, ensuring efficient switching at low voltage. P2003ND5G-VB has extremely low on-resistance (RDS(ON) is 14mΩ and 16mΩ, respectively, at VGS=4.5V and 10V), which effectively reduces power loss and improves system energy efficiency, and is suitable for a variety of high-demand power management applications.
P2003ND5G-VB is a high-performance common-source N+P-type MOSFET in TO252-4L package, designed for high-efficiency power electronics applications. Its maximum drain-source voltage (VDS) is ±40V, which is suitable for medium-voltage circuits. The threshold voltage (Vth) of the device is 1.8V and -1.7V, respectively, ensuring efficient switching at low voltage. P2003ND5G-VB has extremely low on-resistance (RDS(ON) is 14mΩ and 16mΩ, respectively, at VGS=4.5V and 10V), which effectively reduces power loss and improves system energy efficiency, and is suitable for a variety of high-demand power management applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | 16/16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
Detailed parameter description
- **Model**: P2003ND5G-VB
- **Package**: TO252-4L
- **Configuration**: Common source N+P type
- **Maximum drain-source voltage (VDS)**: ±40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V (N channel) / -1.7V (P channel)
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V (N channel)
- 14mΩ @ VGS = 4.5V (P channel)
- 16mΩ @ VGS = 10V (N channel)
- 16mΩ @ VGS = 10V (P channel)
- **Maximum leakage current (ID)**: ±50A
- **Technology**: Trench technology
- **Model**: P2003ND5G-VB
- **Package**: TO252-4L
- **Configuration**: Common source N+P type
- **Maximum drain-source voltage (VDS)**: ±40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V (N channel) / -1.7V (P channel)
- **On-resistance (RDS(ON))**:
- 14mΩ @ VGS = 4.5V (N channel)
- 14mΩ @ VGS = 4.5V (P channel)
- 16mΩ @ VGS = 10V (N channel)
- 16mΩ @ VGS = 10V (P channel)
- **Maximum leakage current (ID)**: ±50A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules
P2003ND5G-VB plays an important role in multiple application fields. In **power management** systems, this MOSFET can effectively control the switching of the power supply and improve the power conversion efficiency with its low on-resistance and high current carrying capacity. It is widely used in DC-DC converters and switching power supplies (SMPS).
In **motor drive** applications, P2003ND5G-VB can be used as a key switching element in the H-bridge circuit to ensure the stability of the motor during reversal and starting, and is suitable for various motor control systems.
In addition, the device is also suitable for **LED driving**, which can improve lighting efficiency and extend the service life of LEDs by efficiently controlling the current of LEDs.
In **battery management systems**, P2003ND5G-VB can achieve efficient power switching and protection, ensure that the battery operates under safe and stable conditions, and optimize its charging and discharging performance. Through these applications, P2003ND5G-VB has become an important component in modern power electronics design.
P2003ND5G-VB plays an important role in multiple application fields. In **power management** systems, this MOSFET can effectively control the switching of the power supply and improve the power conversion efficiency with its low on-resistance and high current carrying capacity. It is widely used in DC-DC converters and switching power supplies (SMPS).
In **motor drive** applications, P2003ND5G-VB can be used as a key switching element in the H-bridge circuit to ensure the stability of the motor during reversal and starting, and is suitable for various motor control systems.
In addition, the device is also suitable for **LED driving**, which can improve lighting efficiency and extend the service life of LEDs by efficiently controlling the current of LEDs.
In **battery management systems**, P2003ND5G-VB can achieve efficient power switching and protection, ensure that the battery operates under safe and stable conditions, and optimize its charging and discharging performance. Through these applications, P2003ND5G-VB has become an important component in modern power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
