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P2003EDG-VB Product details
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Product Introduction
P2003EDG-VB is a high-performance single P-channel MOSFET in TO252 package, designed based on advanced Trench technology. With a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V, the device is optimized for applications requiring high current and low on-resistance. At a gate voltage of 4.5V, the on-resistance (RDS(ON)) of P2003EDG-VB is 25mΩ, and at 10V it is only 18mΩ, ensuring high efficiency and low heat generation under various operating conditions, suitable for a wide range of power management and load switching applications.
P2003EDG-VB is a high-performance single P-channel MOSFET in TO252 package, designed based on advanced Trench technology. With a drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) of ±20V, the device is optimized for applications requiring high current and low on-resistance. At a gate voltage of 4.5V, the on-resistance (RDS(ON)) of P2003EDG-VB is 25mΩ, and at 10V it is only 18mΩ, ensuring high efficiency and low heat generation under various operating conditions, suitable for a wide range of power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -40A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -1.7V | -40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: P2003EDG-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ (@VGS=4.5V)
- 18mΩ (@VGS=10V)
- **Maximum drain current (ID)**: -40A
- **Technology**: Trench
- **Model**: P2003EDG-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 25mΩ (@VGS=4.5V)
- 18mΩ (@VGS=10V)
- **Maximum drain current (ID)**: -40A
- **Technology**: Trench
Domain and module applications：
Applications and modules: P2003EDG-VB is widely used in power management, load switching and battery management systems. In power management, it is often used in DC-DC converters to provide efficient power switching solutions to reduce energy loss. In load switch applications, the device can be used for power switches in mobile devices and consumer electronics to ensure fast response and high efficiency. In addition, in battery management systems, P2003EDG-VB helps improve the charging and discharging efficiency of batteries and extend the battery life of devices. Due to its low on-resistance and high current carrying capacity, the device can work stably under various harsh conditions and meet the high performance requirements of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
