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P1604ES-VB Product details
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Product Introduction
P1604ES-VB is a high-efficiency single P-channel MOSFET in TO263 package. It is designed based on advanced Trench technology and has excellent electrical performance and thermal management capabilities. With a drain-source voltage (VDS) of -40V and a gate-source voltage (VGS) of ±20V, the device is suitable for applications requiring high current and low on-resistance. With its excellent on-performance (RDS(ON) of 15.36mΩ@VGS=4.5V and 12mΩ@VGS=10V), P1604ES-VB can effectively reduce power consumption and improve system efficiency.
P1604ES-VB is a high-efficiency single P-channel MOSFET in TO263 package. It is designed based on advanced Trench technology and has excellent electrical performance and thermal management capabilities. With a drain-source voltage (VDS) of -40V and a gate-source voltage (VGS) of ±20V, the device is suitable for applications requiring high current and low on-resistance. With its excellent on-performance (RDS(ON) of 15.36mΩ@VGS=4.5V and 12mΩ@VGS=10V), P1604ES-VB can effectively reduce power consumption and improve system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2V | -60A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2V | -60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2V | -60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Model**: P1604ES-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 15.36mΩ (@VGS=4.5V)
- 12mΩ (@VGS=10V)
- **Maximum drain current (ID)**: -60A
- **Technology**: Trench
- **Model**: P1604ES-VB
- **Package**: TO263
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 15.36mΩ (@VGS=4.5V)
- 12mΩ (@VGS=10V)
- **Maximum drain current (ID)**: -60A
- **Technology**: Trench
Domain and module applications：
Applications and modules: P1604ES-VB is widely used in many fields, including power management, consumer electronics, industrial control and automotive electronics. In power management, it is often used in DC-DC converters to provide efficient power switching solutions. In consumer electronics, it is suitable for battery management systems of portable devices to ensure efficient energy transmission. In industrial control and electric vehicle drive modules, the device can meet harsh working conditions with its high current carrying capacity and low power consumption characteristics, ensuring the stability and reliability of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
