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P1603BD-VB Product details
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P1603BD-VB Product Introduction
P1603BD-VB is a high-performance N-channel MOSFET in TO252 package with excellent conductivity and switching characteristics. With a VDS rating of 30V, it can operate at a leakage current of up to 70A, suitable for a variety of power management and switching applications. Its low RDS(ON) value allows the device to generate less heat during operation, thereby improving the efficiency and reliability of the system.
P1603BD-VB is a high-performance N-channel MOSFET in TO252 package with excellent conductivity and switching characteristics. With a VDS rating of 30V, it can operate at a leakage current of up to 70A, suitable for a variety of power management and switching applications. Its low RDS(ON) value allows the device to generate less heat during operation, thereby improving the efficiency and reliability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: P1603BD-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
- **Model**: P1603BD-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**: P1603BD-VB can be widely used in power converters and power supply equipment, using its low on-resistance to improve conversion efficiency and reduce energy loss.
2. **Motor drive**: This MOSFET is suitable for DC motor drive modules, capable of handling high current and fast switching, improving the response speed and control accuracy of the motor.
3. **LED drive circuit**: In LED lighting systems, P1603BD-VB can be used as a switching element to ensure efficient power supply and good heat dissipation performance of LED lamps.
4. **Inverter**: This MOSFET can be used in renewable energy systems such as solar inverters to achieve efficient power conversion and management.
5. **Consumer electronics**: In various consumer electronics products, such as chargers and portable devices, P1603BD-VB can be used to increase power density and reduce size.
P1603BD-VB is an important choice for designing high-performance electronic devices due to its excellent electrical properties and wide range of application scenarios.
1. **Power management**: P1603BD-VB can be widely used in power converters and power supply equipment, using its low on-resistance to improve conversion efficiency and reduce energy loss.
2. **Motor drive**: This MOSFET is suitable for DC motor drive modules, capable of handling high current and fast switching, improving the response speed and control accuracy of the motor.
3. **LED drive circuit**: In LED lighting systems, P1603BD-VB can be used as a switching element to ensure efficient power supply and good heat dissipation performance of LED lamps.
4. **Inverter**: This MOSFET can be used in renewable energy systems such as solar inverters to achieve efficient power conversion and management.
5. **Consumer electronics**: In various consumer electronics products, such as chargers and portable devices, P1603BD-VB can be used to increase power density and reduce size.
P1603BD-VB is an important choice for designing high-performance electronic devices due to its excellent electrical properties and wide range of application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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