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P13P10ZA-VB Product details
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Product Introduction
P13P10ZA-VB is a high-performance P-channel MOSFET in TO252 package, designed for low-voltage and high-efficiency applications. Its maximum drain-source voltage can reach -100V, suitable for a variety of power electronic equipment that require high current and fast switching capabilities. With its excellent on-resistance, P13P10ZA-VB can effectively reduce energy loss and improve overall efficiency.
P13P10ZA-VB is a high-performance P-channel MOSFET in TO252 package, designed for low-voltage and high-efficiency applications. Its maximum drain-source voltage can reach -100V, suitable for a variety of power electronic equipment that require high current and fast switching capabilities. With its excellent on-resistance, P13P10ZA-VB can effectively reduce energy loss and improve overall efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 120mΩ@VGS=4.5V
- 100mΩ@VGS=10V
- **Maximum drain current (ID)**: -16A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 120mΩ@VGS=4.5V
- 100mΩ@VGS=10V
- **Maximum drain current (ID)**: -16A
- **Technology**: Trench
Domain and module applications：
Applications and modules: P13P10ZA-VB is widely used in various power management and switching power supply designs, especially suitable for load switches, DC-DC converters and battery management systems. In power tools and consumer electronics, this MOSFET can effectively control current and achieve efficient energy conversion. In the field of automotive electronics, it is also widely used in drive circuits and battery protection circuits to ensure the safety and efficient operation of the system. Its excellent performance and reliability make it an important part of modern power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
