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P11NM60AFP-VB Product details
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Product Introduction
P11NM60AFP-VB is a high voltage N-channel MOSFET in TO220F package, designed for high voltage and high current applications. Its maximum drain-source voltage can reach 650V, which can provide excellent performance in a variety of power electronics applications, especially suitable for power management and switch control.
P11NM60AFP-VB is a high voltage N-channel MOSFET in TO220F package, designed for high voltage and high current applications. Its maximum drain-source voltage can reach 650V, which can provide excellent performance in a variety of power electronics applications, especially suitable for power management and switch control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ@VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Plannar
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ@VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Plannar
Domain and module applications：
Applications and modules: P11NM60AFP-VB is widely used in high voltage applications such as power converters, inverters and motor control. Due to its good current carrying capacity and low conduction loss, this MOSFET is very suitable for use in switching power supplies and industrial power management modules. In addition, it also performs well in power tools, household appliances and lighting control systems, ensuring efficient operation and long-term reliability of the equipment, and can meet the stringent requirements of modern electronic equipment for energy efficiency and durability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
